Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
26.67 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1515 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
603979776 bit |
.0145 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1120 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1040 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
29.21 mm |
100 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1840 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
975 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
301989888 bit |
.0025 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2100 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N200 |
38.1 mm |
83 MHz |
Not Qualified |
301989888 bit |
.036 Amp |
9.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4260 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
2415919104 bit |
.086 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
880 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.002 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2920 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
1207959552 bit |
.085 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1515 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
603979776 bit |
.021 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1160 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
143 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
760 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
31.75 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2460 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N200 |
38.1 mm |
100 MHz |
Not Qualified |
301989888 bit |
.036 Amp |
8.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
2147483648 bit |
.016 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
2147483648 bit |
.016 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1080 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
133 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1840 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.004 Amp |
7 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1980 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.0045 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
540 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
66 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
12 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1120 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
7 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2730 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.086 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5160 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
2415919104 bit |
.019 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1280 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1760 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1073741824 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
1207959552 bit |
.009 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2280 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.085 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1280 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
29.21 mm |
125 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
6 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1080 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1073741824 bit |
.032 Amp |
8 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1040 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2730 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.019 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5500 mA |
67108864 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
4831838208 bit |
.028 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1332 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
301989888 bit |
.036 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1660 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
603979776 bit |
.08 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
660 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
268435456 bit |
.002 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1160 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
143 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
880 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.002 Amp |
6 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1542 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N200 |
38.1 mm |
83 MHz |
Not Qualified |
301989888 bit |
.036 Amp |
9.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
880 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1100 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1200 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
603979776 bit |
.005 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1040 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1260 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
603979776 bit |
.0045 Amp |
5.4 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.