SYNCHRONOUS DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
M366S3323ETU-C7C	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N168		3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.032 Amp	5.4 ns
M374S1723ETS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.018 Amp	5.4 ns
KMM377S3320T1-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	2	R-XDMA-N168		3.6 V		125 MHz	Not Qualified	2415919104 bit	3 V					.02 Amp	6 ns
KMM378S1620CT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2250 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N200		3.6 V		125 MHz	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.02 Amp	6 ns
M368L3223BT0-CA2	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
M390S3320ET1-C7C	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4460 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V		133 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.038 Amp	5.4 ns
KMM377S1723CT3-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.009 Amp	6 ns
M366S3253DTU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp	5.4 ns
KMM377S1723T3-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	2	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	1207959552 bit	3 V					.009 Amp	6 ns
KMM378S823CT-G0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	990 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	1	R-XDMA-N200		3.6 V		100 MHz	Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.011 Amp	7 ns
KMM378S1723T-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N200		3.6 V		100 MHz	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.009 Amp	6 ns
KMM377S823CT1-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		8MX72	8M		DUAL	2	R-XDMA-N168		3.6 V			Not Qualified	603979776 bit	3 V						6 ns
M390S2858CTU-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4460 mA	134217728 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH				.074 Amp	6 ns
KMM466S824AT2-F2	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		620 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			29.21 mm	83 MHz	Not Qualified	536870912 bit						.016 Amp	8 ns
M390S2858ET1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4190 mA	134217728 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N168		3.6 V		133 MHz	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH				.075 Amp	5.4 ns
M464S0924MT1-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		ZIG-ZAG	1	R-XZMA-N144		3.6 V	25.4 mm	100 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	6 ns
KMM377S6428AT3-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4820 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH				.038 Amp	6 ns
KMM374S1623BTL-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1170 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.018 Amp	6 ns
M470T2864DZ3-CCC	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1140 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N200		1.9 V		200 MHz	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.12 Amp	.6 ns
M366S3323AT0-C75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp	5.4 ns
KMM377S1723AT3-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M		DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH					6 ns
KMM366S1724T-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp	6 ns
M463S0924ET1-C7C	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V			Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH					5.4 ns
KMM464S924BT1-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V			Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH					6 ns
M366S3253ATS-C80	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N168	1	3.6 V		125 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp	6 ns
KMM377S2857AT2-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3710 mA	134217728 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH				.038 Amp	6 ns
KMM366S424BTL-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH					6 ns
KMM464S924AT1-FL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V			Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH					6 ns
M464S0924MT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		ZIG-ZAG	1	R-XZMA-N144		3.6 V	25.4 mm	100 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	6 ns
M374S3323CT0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2160 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.018 Amp	6 ns
KMM366S1623DTL-G	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH					7 ns
M464S3254AT1-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1060 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp	6 ns
KMM374S823BT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1350 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.009 Amp	6 ns
KMM375S400CT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2130 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	2	R-XDMA-N168		3.6 V		125 MHz	Not Qualified	301989888 bit	3 V					.02 Amp	6 ns
M366S3253BTS-C75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp	6 ns
KMM366S1623CT-C80	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168		3.6 V		125 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.016 Amp	6 ns
KMM464S1724T-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1600 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL		R-PDMA-N144				100 MHz	Not Qualified	1073741824 bit						.008 Amp	6 ns
M377S3320MT3-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3800 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.02 Amp	6 ns
M374S1723DTU-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1710 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.018 Amp	6 ns
KMM374S403CTS-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1125 mA	4194304 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.018 Amp	6 ns
M463S3254DK1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	920 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144		3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp	5.4 ns
M366S1654DTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp	6 ns
M390S3320AT1-C75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4460 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V		133 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.02 Amp	5.4 ns
M374S3323DTS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.036 Amp	6 ns
M464S0924FTS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V	31.75 mm	133 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp	5.4 ns
M466S0823BT3-L100	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	TIN SILVER COPPER	DUAL		R-PDMA-N144	3		26.67 mm	100 MHz	Not Qualified	536870912 bit			e1			.008 Amp	7 ns
M390S2858BTU-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4820 mA	134217728 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH				.074 Amp	6 ns
M368L6423BT0-LA0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz	Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH					.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.