SYNCHRONOUS DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
KMM466S804AT-F8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		860 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL		R-PDMA-N144			31.75 mm	125 MHz	Not Qualified	536870912 bit					.016 Amp	6 ns
M366S0424ETS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH			.004 Amp	6 ns
M366S3253CTU-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH			.016 Amp	6 ns
M366S0823CT0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1000 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH			.008 Amp	6 ns
KMM366S403CT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				6 ns
KMM366S1724T-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V		125 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	6 ns
KMM366S1723TS-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				6 ns
M463S1654DT1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	5.4 ns
M378S0823BT0-C1H0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1350 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel	DUAL		R-PDMA-N200				100 MHz	Not Qualified	603979776 bit					.011 Amp	6 ns
M390S5658BT1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4640 mA	268435456 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	19327352832 bit	3 V	AUTO/SELF REFRESH			.075 Amp	5.4 ns
M390S6450CTU-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3920 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH			.038 Amp	6 ns
KMM366S1623BT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2400 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V		125 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.016 Amp	6 ns
KMM390S3320T-GA	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3800 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V		133 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH			.02 Amp	5.4 ns
M381L3223BT0-CB0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz	Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M464S1654BT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	ZIG-ZAG	1	R-XZMA-N144	1	3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	6 ns
M464S3254AT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1060 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH			.016 Amp	6 ns
M374S0823FTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1125 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH			.009 Amp	6 ns
M463S1724BN0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	ZIG-ZAG	1	R-XZMA-N144		3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	7 ns
M464S1654CTS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	5.4 ns
M377S5658MT3-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6980 mA	268435456 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	19327352832 bit	3 V	AUTO/SELF REFRESH			.185 Amp	6 ns
KMM464S824DT1-FL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144		3.6 V			Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				6 ns
M463S1654DT1-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	6 ns
KMM366S403BT2-G2	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1280 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL		R-PDMA-N168			29.21 mm	83 MHz	Not Qualified	268435456 bit					.008 Amp	8 ns
KMM366S3253ATS-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				6 ns
KMM378S3320T-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	2	R-XDMA-N200		3.6 V		100 MHz	Not Qualified	2415919104 bit	3 V				.018 Amp	6 ns
M464S0424CT0-C1H0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		500 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL		R-PDMA-N144			25.4 mm	100 MHz	Not Qualified	268435456 bit					.004 Amp	6 ns
KMM375S823CT-G00	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				7 ns
KMM466S803BT3-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL		R-PDMA-N144			29.21 mm	100 MHz	Not Qualified	536870912 bit					.008 Amp	7 ns
KMM377S3323AT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				6 ns
M366S1723ITU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.016 Amp	5.4 ns
M366S1723BTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	6 ns
KMM464S924T-GH/GL	Samsung	SYNCHRONOUS DRAM MODULE		144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words					64	MICROELECTRONIC ASSEMBLY						8MX64	8M		DUAL	1	R-XDMA-N144					Not Qualified	536870912 bit						6 ns
M374S6453CTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2070 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH			.036 Amp	5.4 ns
M377S6428BT3-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4820 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH			.038 Amp	6 ns
M466S1723AT2-L10	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144		3.6 V		100 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	7 ns
M366S6453CTS-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH			.032 Amp	6 ns
M377S3323MT0-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V		100 MHz	Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH			.02 Amp	6 ns
M366S3323AT0-C80	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				6 ns
M366S6453DTU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH			.032 Amp	5.4 ns
M463S1654CT1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			.008 Amp	5.4 ns
M470T2864DZ3-LD5	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	DUAL	1	R-XDMA-N200		1.9 V		267 MHz	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.064 Amp	.5 ns
M366S0823CTS-C1L0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL		R-PDMA-N168				100 MHz	Not Qualified	536870912 bit					.008 Amp	6 ns
M464S6453CKS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	DUAL	1	R-XDMA-N144		3.6 V		100 MHz	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.032 Amp	6 ns
KMM366S824DT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				6 ns
M390S6450DT1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4100 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH			.038 Amp	5.4 ns
M464S3254BT1-L75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1000 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N144		3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH			.016 Amp	5.4 ns
KMM366S823DTS-GA	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168		3.6 V		133 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH			.008 Amp	5.4 ns
M463S0924ET1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	1	3.6 V	29.9974 mm	133 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH			.008 Amp	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.