VIDEO DRAM DRAM 823

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MSM5416273-50GS-K	Lapis Semiconductor	VIDEO DRAM	COMMERCIAL	64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	SYNCHRONOUS	200 mA	262144 words	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G64	1	5.5 V	2.5 mm	10.5 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp	26 mm	50 ns
MT42C4256Z-8	Micron Technology	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	130 mA	262144 words	5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28		5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.008 Amp	36 mm	80 ns
KM424C64Z-10	Samsung	VIDEO DRAM	COMMERCIAL	24	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words	5	5	4	IN-LINE	ZIP24,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T24		5.5 V	10.16 mm	2.96 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.003 Amp		100 ns
MT42C8128DJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	160 mA	131072 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40		5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.008 Amp	26.06 mm	70 ns
MT42C8256DJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	195 mA	262144 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40		5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.01 Amp	26.06 mm	80 ns
KM4232W259A-60	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	220 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120		5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V		e0			.01 Amp	20 mm	60 ns
MT43C8128AEJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	200 mA	131072 words	5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0			.002 Amp	19.1262 mm	70 ns
TMS55165-60DGE	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					23.495 mm	60 ns
SMJ44C251B-10SVL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-CZIP-T28		5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					36.83 mm	100 ns
SMJ44C251B-12HMM	Texas Instruments	VIDEO DRAM	MILITARY	28	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	100 mA	262144 words	5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-N28		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.288 mm	120 ns
SMJ44C251-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28		5.5 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	100 ns
SMJ55166-80GB	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words	5		16	GRID ARRAY			2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.62 mm	24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					24.38 mm	80 ns
SMJ44C251B-12JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-CDIP-T28		5.5 V	3.56 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						120 ns
TMS44C250-1DZL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28		5.25 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.415 mm	100 ns
5962-8949704MXX	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words	5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-XDIP-T28		5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp		100 ns
5962-8949704MYA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-J28		5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					100 ns
SMJ44C251-1JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28		5.25 V	4.445 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					36.83 mm	100 ns
SMJ55160-80HKCM	Texas Instruments	VIDEO DRAM	MILITARY	64	GDFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		262144 words	5		16	FLATPACK, GUARD RING			.5 mm	125 Cel		256KX16	256K	-55 Cel		DUAL	2	R-CDFP-F64			3.81 mm	10.985 mm	Not Qualified	4194304 bit		CAS BEFORE RAS/HIDDEN REFRESH					18.485 mm	80 ns
5962-8949703MMA	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words	5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28		5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	36.83 mm	120 ns
TMS55165-60DGH	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	225 mA	262144 words	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm	12.04 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	26.295 mm	60 ns
TMS44C251-10DJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28		5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	18.415 mm	100 ns
SMJ4161-15JDS	Texas Instruments	VIDEO DRAM	OTHER	20	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words	5		1	IN-LINE	DIP20,.3	Other Memory ICs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL	2	R-CDIP-T20		5.25 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.75 V	RAS ONLY REFRESH; 256 X 1 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.025 Amp		150 ns
SMJ55161-75GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	MOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words	5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68		5.5 V		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	24.38 mm	75 ns
SMJ44C251B-10HMMT	Texas Instruments	VIDEO DRAM	MILITARY	28	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-CDSO-N28		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.285 mm	100 ns
TMS55175-70DGE	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					23.495 mm	70 ns
5962-9454901MYA	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS		FLAT	ASYNCHRONOUS		262144 words	5		16	FLATPACK			.5 mm	125 Cel		256KX16	256K	-55 Cel	TIN LEAD	DUAL	2	R-XDFP-F64		5.5 V	3.81 mm	10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e0				18.985 mm	80 ns
TMS4161-15NE	Texas Instruments	VIDEO DRAM	INDUSTRIAL	20	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL	2	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT					24.325 mm	150 ns
SMJ44C251-15HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28			4.52 mm	10.541 mm	Not Qualified	1048576 bit		CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.545 mm	150 ns
SMJ4461-15JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	5		4	IN-LINE				70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	2	R-CDIP-T24		5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT						150 ns
TMS44C251-12DZL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.415 mm	120 ns
TMS55170-60DGH	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm	12.04 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					26.295 mm	60 ns
TMS55176-70DGE	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					23.495 mm	70 ns
5962-9454901MXA	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-STD-883	PIN/PEG	ASYNCHRONOUS	195 mA	262144 words	5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		80 ns
SMJ44C251-15JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28			3.56 mm	10.16 mm	Not Qualified	1048576 bit		CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						150 ns
SMJ55161-80GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	MOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	200 mA	262144 words	5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68		5.5 V		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	24.38 mm	80 ns
TMS4461-12SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	5	5	4	IN-LINE	ZIP24,.1	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		ZIG-ZAG	2	R-PZIP-T24		5.5 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ44C250-2HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28		5.25 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	120 ns
5962-8949703MYA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-J28		5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					120 ns
TMS44C251-12DJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28		5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	18.415 mm	120 ns
5962-8949703MMX	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28		5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH					36.83 mm	120 ns
SMJ55161-70GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words	5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68		5.5 V		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	24.38 mm	70 ns
SMJ44C250-12HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28		5.5 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	120 ns
5962-9564303QXC	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words	5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel	GOLD	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4					75 ns
TMS55160-60DGH	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	225 mA	262144 words	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm	12.04 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	26.295 mm	60 ns
TMS44C251-12SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	95 mA	262144 words	5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28		5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.01 Amp		120 ns
TMS44C250-1SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28		5.25 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						100 ns
SMJ55166-80HKC	Texas Instruments	VIDEO DRAM	MILITARY	64	GDFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS		FLAT	ASYNCHRONOUS		262144 words	5		16	FLATPACK, GUARD RING			.5 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		DUAL	2	R-CDFP-F64		5.5 V	3.81 mm	10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					18.985 mm	80 ns
TMS48C121-12DZ	Texas Instruments	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	2	R-PDSO-J40		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	26.035 mm	120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.