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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K4Y50084UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		35 ns
K4Y54044UF-JCC4	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104				500 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y54084UF-JCC40	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		8	GRID ARRAY, THIN PROFILE			1.27 mm			32MX8	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50164UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1050 mA	33554432 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		36 ns
K4Y54044UF-JCA20	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	YES		1.8		4	GRID ARRAY, THIN PROFILE			1.27 mm			64MX4	64M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50044UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1270 mA	134217728 words	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	28 ns
K4Y54084UF-JCA20	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		8	GRID ARRAY, THIN PROFILE			1.27 mm			32MX8	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50044UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1100 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1	260	.025 Amp		35 ns
K4Y54164UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50164UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1300 mA	33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	35 ns
K4Y50024UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1000 mA	268435456 words	YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	35 ns
K4Y50084UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1360 mA	67108864 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		28 ns
K4Y50044UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	900 mA	134217728 words	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	36 ns
K4Y54164UF-JCC40	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm			16MX16	16M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50024UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	820 mA	268435456 words	YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	36 ns
K4Y54044UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50164UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1500 mA	33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	28 ns
K4Y54164UF-JCB30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm			16MX16	16M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y54084UF-JCC4	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				500 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y54044UF-JCB30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	YES		1.8		4	GRID ARRAY, THIN PROFILE			1.27 mm			64MX4	64M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y54084UF-JCB30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		8	GRID ARRAY, THIN PROFILE			1.27 mm			32MX8	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y54084UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y54164UF-JCC4	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y54044UF-JCC40	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	YES		1.8		4	GRID ARRAY, THIN PROFILE			1.27 mm			64MX4	64M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y54164UF-JCA20	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm			16MX16	16M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50084UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		980 mA	67108864 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		36 ns
K4Y50024UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1000 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1	260	.025 Amp		35 ns
K4Y54084UF-JCC30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		8	GRID ARRAY, THIN PROFILE			1.27 mm			32MX8	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50164UC-JCB3T	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm			32MX16	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm	35 ns
K4Y54084UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				300 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50044UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		900 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		36 ns
K4Y50084UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1360 mA	67108864 words	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	28 ns
K4Y50044UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1270 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		28 ns
K4Y50024UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1210 mA	268435456 words	YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	28 ns
K4Y54164UF-JCC30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm			16MX16	16M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y50164UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1300 mA	33554432 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1	260	.025 Amp		35 ns
K4Y50024UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		820 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		36 ns
K4Y54044UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y54044UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104				300 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50164UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1050 mA	33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	36 ns
K4Y54084UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50044UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1100 mA	134217728 words	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	35 ns
K4Y50084UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1200 mA	67108864 words	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	35 ns
K4Y50084UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	980 mA	67108864 words	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	36 ns
K4Y50024UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1210 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		28 ns
K4Y54044UF-JCC30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	YES		1.8		4	GRID ARRAY, THIN PROFILE			1.27 mm			64MX4	64M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4Y54164UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50164UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1500 mA	33554432 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		28 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.