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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM4232W259A-60	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	220 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V		e0	.01 Amp	20 mm	60 ns
KM4232W259AQ-50	Samsung	VIDEO DRAM		120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	5		32	FLATPACK, FINE PITCH			.5 mm			256KX32	256K			QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V				20 mm	50 ns
KM4232W259Q-60	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	240 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V		e0	.01 Amp	20 mm	60 ns
KM4232W259A-5000	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words	5		32	FLATPACK, FINE PITCH			.5 mm	70 Cel		256KX32	256K	0 Cel		QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm		8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH			20 mm	50 ns
KM4232W259AQ-60	Samsung	VIDEO DRAM		120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	5		32	FLATPACK, FINE PITCH			.5 mm			256KX32	256K			QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V				20 mm	60 ns
KM4232W259A-50	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	240 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V		e0	.01 Amp	20 mm	50 ns
KM4232W259-70	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS	GULL WING	ASYNCHRONOUS	220 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH; 128 X 16 SAM PORT	e0	.00001 Amp	20 mm	70 ns
KM4232W259-60	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS	GULL WING	ASYNCHRONOUS	240 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH; 128 X 16 SAM PORT	e0	.00001 Amp	20 mm	60 ns
KM4232W259Q-70	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	220 mA	262144 words	5	5	32	FLATPACK, FINE PITCH	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm	Not Qualified	8388608 bit	4.5 V		e0	.01 Amp	20 mm	70 ns
KM4232W259A-6000	Samsung	VIDEO DRAM	COMMERCIAL	120	FQFP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words	5		32	FLATPACK, FINE PITCH			.5 mm	70 Cel		256KX32	256K	0 Cel		QUAD	2	R-PQFP-G120	5.5 V	2.3 mm	14 mm		8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH			20 mm	60 ns
MT42LC256K32A1LG-20TR	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3		32	FLATPACK				70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0			60 ns
MT42LC256K32A1LG-30TR	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3		32	FLATPACK				70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0			80 ns
MT42LC256K32A1LG-20	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	180 mA	262144 words	3.3	3.3	32	FLATPACK	QFP120(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0	.008 Amp		60 ns
MT42LC256K32A1LG-25	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	262144 words	3.3	3.3	32	FLATPACK	QFP120(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0	.008 Amp		70 ns
MT42LC256K32A1LG-25TR	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3		32	FLATPACK				70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0			70 ns
MT42LC256K32A1LG-30	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	262144 words	3.3	3.3	32	FLATPACK	QFP120(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0	.008 Amp		80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.