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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MT42L16M32D1AB-3AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	333 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L16M32D1AB-25WT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			16MX32	16M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L16M32D1AB-25AT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			16MX32	16M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L16M32D1AB-3AT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			16MX32	16M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L32M16D1AB-3AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	33554432 words	4,8,16	YES	COMMON	1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	333 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L32M32D2AB-25AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	33554432 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	400 MHz	6.5 mm	1073741824 bit	1.14 V					.001 Amp	4,8,16	8 mm
MT42L32M16D1AB-25IT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO OPERATES IN 1.7V TO 1.95V	e1					8 mm
MT42L16M32D1AB-3AAT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	105 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	333 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L32M16D1AB-25AAT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	33554432 words	4,8,16	YES	COMMON	1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	105 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	400 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L16M32D1AB-3WT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			16MX32	16M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L32M16D1AB-3AAT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	33554432 words	4,8,16	YES	COMMON	1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	105 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	333 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L16M32D1AB-25AAT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	105 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	400 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L32M32D2AB-25AAT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	33554432 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	105 Cel	3-STATE	32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	400 MHz	6.5 mm	1073741824 bit	1.14 V					.001 Amp	4,8,16	8 mm
MT42L32M32D2AB-3AAT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	33554432 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	105 Cel	3-STATE	32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	333 MHz	6.5 mm	1073741824 bit	1.14 V					.001 Amp	4,8,16	8 mm
MT42L32M16D1AB-3AT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			32MX16	32M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L32M16D1AB-25WT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			32MX16	32M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L32M16D1AB-25AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	33554432 words	4,8,16	YES	COMMON	1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	400 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L16M32D1AB-25AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	400 MHz	6.5 mm	536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm
MT42L32M16D1AB-25AT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					8 mm
MT42L32M16D1AB-3WT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			32MX16	32M			BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT42L32M32D2AB-3AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	33554432 words	4,8,16	YES	COMMON	1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20	.5 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm	333 MHz	6.5 mm	1073741824 bit	1.14 V		e1	30	260	.001 Amp	4,8,16	8 mm
MT42L32M16D1FE-25IT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	121	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm	536870912 bit	1.14 V	SELF REFRESH	e1					8 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.