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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4J55323QI-BC14T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		925 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		R-PBGA-B136	3			700 MHz		Not Qualified	268435456 bit					260	.085 Amp	4,8		.26 ns
K4J10324QD-HJ1A0	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1000 mA	33554432 words	4,8	YES	COMMON	1.8	1.85	32	GRID ARRAY	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	1000 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.1 Amp	4,8	14 mm	.2 ns
K4J52324KI-HC12	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		580 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM		R-PBGA-B136				800 MHz		Not Qualified	536870912 bit					260	.075 Amp			.23 ns
K4J52324QC-BC200	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns
K4J55323QI-BJ11	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1065 mA	8388608 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		R-PBGA-B136	3			900 MHz		Not Qualified	268435456 bit					260	.09 Amp	4,8		.22 ns
K4J55323QG-BC12	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1050 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	268435456 bit					260	.1 Amp	4,8		.23 ns
K4U52324QE-BC060	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	8	YES	COMMON	1.8	1.95	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.89 V	1.2 mm	1600 MHz	11 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	14 mm	.15 ns
K4H280438C-TLB3T	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			166 MHz		Not Qualified	134217728 bit					240	.004 Amp	2,4,8		.7 ns
K4J10324QD-HC12	Samsung	DDR3 DRAM		136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		780 mA	33554432 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm		3-STATE	32MX32	32M		TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	1073741824 bit			e1		260	.085 Amp	4,8		.23 ns
K4H280438C-TLB30	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			166 MHz		Not Qualified	134217728 bit					240	.004 Amp	2,4,8		.7 ns
K4J52324QE-BJ1AT	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1520 mA	16777216 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			1000 MHz		Not Qualified	536870912 bit			e1		260	.11 Amp	4,8		.2 ns
K4U52324QE-BC080	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1190 mA	16777216 words	8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.89 V	1.2 mm	1200 MHz	11 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.123 Amp	8	14 mm	.19 ns
K4J10324QD-HC14T	Samsung	DDR3 DRAM		136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		715 mA	33554432 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm		3-STATE	32MX32	32M		TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			700 MHz		Not Qualified	1073741824 bit			e1		260	.08 Amp	4,8		.26 ns
K4J55323QI-BJ11T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1065 mA	8388608 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		R-PBGA-B136	3			900 MHz		Not Qualified	268435456 bit					260	.09 Amp	4,8		.22 ns
K4J10324KE-HC7A	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		800 mA	33554432 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B136				1300 MHz		Not Qualified	1073741824 bit					260	.11 Amp	4,8		.18 ns
K4J55323QI-BJ1A0	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1145 mA	8388608 words	4,8	YES	COMMON	1.9	1.9	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	1	R-PBGA-B136		2 V	1.2 mm	1000 MHz	11 mm	Not Qualified	268435456 bit	1.8 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.095 Amp	4,8	14 mm	.2 ns
K4J52324QC-SC140	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm
K4J52324KI-HC7A0	Samsung	DDR3 DRAM		136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		1	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX1	512M			BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.18 ns
K4H280438C-TCB00	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		315 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			133 MHz		Not Qualified	134217728 bit					240	.004 Amp	2,4,8		.75 ns
K4J52324QC-AC200	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.35 ns
K4H280438C-TCA00	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		255 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			100 MHz		Not Qualified	134217728 bit					240	.0035 Amp	2,4,8		.8 ns
K4U52324QE-BC06T	Samsung	GDDR4 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	8		COMMON	1.95	1.95	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM		R-PBGA-B136				1600 MHz		Not Qualified	536870912 bit							8		.15 ns
K4J52324QE-BC120	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1130 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	800 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.09 Amp	4,8	14 mm	.23 ns
K4J52324QE-BJ110	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1270 mA	16777216 words	4,8	YES	COMMON	1.9	1.9	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		2 V	1.2 mm	900 MHz	11 mm	Not Qualified	536870912 bit	1.8 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.1 Amp	4,8	14 mm	.22 ns
K4J52324QC-AC160	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.29 ns
K4U52324QE-BC090	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1130 mA	16777216 words	8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.89 V	1.2 mm	1100 MHz	11 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.116 Amp	8	14 mm	.2 ns
EDJ8232B5MB-GN-F	Micron Technology	DDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.575 V	1.2 mm		10.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm	.225 ns
EDJ8232E5MB-DJ-F	Micron Technology	DDR3L DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm	.255 ns
EDJ8232B5MB-DJ-F	Micron Technology	DDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.575 V	1.2 mm		10.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm	.255 ns
EDJ8232E5MB-GN-F	Micron Technology	DDR3L DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm	.225 ns
MT41K256M32SLD-125:E	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SLD-15EM:E	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SLD-187EIT:E	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SGB-15E:D	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SGB-187E:D	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SLD-187E:E	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SGB-125IT:D	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	SELF REFRESH						14 mm
MT41K256M32SLD-15E:E	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SLD-125M:E	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M32SGB-125:D	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SGB-187EIT:D	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	SELF REFRESH						14 mm
MT41K256M32SLD-15EIT:E	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M32SLD-187EM:E	Micron Technology	DDR DRAM MODULE	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SLD-125IT:E	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M32SGB-15EIT:D	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B136		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	SELF REFRESH						14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.