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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT8LSDT1664LHG-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2480 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144	1			133 MHz		Not Qualified	1073741824 bit						.016 Amp			5.4 ns
MT49H16M18CBM-18:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.22 ns
MT4LSDT864LHY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		8MX64	8M	0 Cel	GOLD	DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT49H16M36BM-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	700 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX36	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.055 Amp		18.5 mm	20 ns
MT16LSDD6464LHG-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		30	235				5.4 ns
MT49H32M9HU-5	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX9	32M		TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.5 ns
MT49H32M18FM-25E:A	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	980 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX18	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			.053 Amp		18.5 mm	15 ns
MT49H32M18CHT-25EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	15 ns
MT8LSDT1664HG-13EB1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT4LSDT864WG-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144	1		30.099 mm	125 MHz		Not Qualified	536870912 bit						.008 Amp			6 ns
MT49H64M9BM-33IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX9	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	20 ns
MT49H16M16FM-4	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	616 mA	16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		1.95 V	.93 mm	250 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e0					18.5 mm
MT49H32M18CHT-33:A	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	20 ns
MT4LSDT1664LHY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1140 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	65 Cel	3-STATE	16MX64	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N144	1			143 MHz		Not Qualified	1073741824 bit			e3			.008 Amp			5.4 ns
MT49H64M9FM-18	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	64MX9	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0					18.5 mm	.12 ns
MT4LSDT1664HG-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	65 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144	1			125 MHz		Not Qualified	1073741824 bit						.008 Amp			6 ns
MT8LSDF3264WG-13EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		30	235				5.4 ns
MT4LSDT864HG-133B2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT8LSDT1664HG-662B1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e0						7.5 ns
MT49H8M32HT-5	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	598 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.95 V	1.2 mm	200 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT49H16M18CFM-18	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18CHT-33	Micron Technology	DDR DRAM	COMMERCIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	819 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.048 Amp	2,4,8	18.5 mm	.25 ns
MT49H32M9FM-18:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm			32MX9	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H64M9CHU-18IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX9	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	15 ns
MT49H8M36FM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	.3 ns
MT16LSDD6464LHG-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4320 mA	67108864 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144				125 MHz		Not Qualified	4294967296 bit						.032 Amp			6 ns
MT4LSDT864LWG-13EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							5.4 ns
MT49H32M18HT-25E	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT8LSDT864LHG-10EC5	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	900 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0			.016 Amp			6 ns
MT8LSDT864HY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1840 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	MATTE TIN	DUAL		R-PDMA-N144	1		31.75 mm	143 MHz		Not Qualified	536870912 bit			e3			.016 Amp			5.4 ns
MT49H64M9CHU-33:A	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		64MX9	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT49H16M16FM-3.3	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	610 mA	16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH	e0					18.5 mm
MT49H16M18CSJ-33:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		530 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.35 ns
MT49H8M36BM-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	700 mA	8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H64M9CBM-25:B	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	655 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.005 Amp	2,4,8	18.5 mm	20 ns
MT49H16M18CFM-25E	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT8LSDT1664LHG-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235			67.585 mm	6 ns
MT4LSDT864LWG-10EB1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
MT49H64M9FM-25E	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	819 mA	67108864 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	64MX9	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0			.048 Amp		18.5 mm	.2 ns
MT16LSDF3264HY-13EG4	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		32MX64	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	31.88 mm		3.8 mm		2147483648 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e4					67.585 mm	5.4 ns
MT16LSDF3264HY-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		32MX64	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	e4					67.585 mm	6 ns
MT49H32M18CHT-18:A	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	15 ns
MT49H8M36CFM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.5 ns
MT49H8M32FM-4	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	706 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		1.95 V	.93 mm	250 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e0					18.5 mm
MT8LSDT864HY-13EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e4					67.585 mm	5.4 ns
MT49H16M36CHU-33	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm
MT8LDT264HG-6XL	Micron Technology	EDO DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		688 mA	2097152 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL		R-PDMA-N144						Not Qualified	134217728 bit						.0012 Amp			60 ns
MT49H16M36SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.