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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
8201007EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201003EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
M38510/24604BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B		THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words	COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16	5.5 V			Not Qualified	262144 bit	4.5 V			.01 Amp		150 ns
8201002EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24602BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
8201008EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				120 ns
8201003EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201001EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24604BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
M38510/24401BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				150 ns
IMS2600P-10	STMicroelectronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			100 ns
M38510/24403BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				200 ns
M38510/24602BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B		THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words	COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16	5.5 V			Not Qualified	262144 bit	4.5 V			.01 Amp		150 ns
M38510/24005BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B		THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				250 ns
M38510/24403BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				200 ns
8201007EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201006EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24004BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B		THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201001EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
HYB4164-C3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			200 ns
HYB4164-C2	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			150 ns
HYB4164-P2	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			150 ns
HYB41257-P12	Infineon Technologies	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
HYB4116-P4	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0			250 ns
HYB4164-P3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			200 ns
HYB4116-C2	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			150 ns
HYB41256-12	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		75 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
HYB41256-P20	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			200 ns
HYB4116-C3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			200 ns
HYB4116-P3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO	1	CMOS		-5 V	THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T16	5.5 V	4.2 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	REFRESH; ALSO REQUIRES VDD 12 V	e0		20.2 mm	200 ns
HYB41257-P15	Infineon Technologies	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
HYB41256-15	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
HYB41257-P20	Infineon Technologies	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			200 ns
HYB4164-P4	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			250 ns
HYB4164-P1	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			120 ns
HYB41256-10	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		85 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			100 ns
HYB4116-P2	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO	1	CMOS		-5 V	THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T16	5.5 V	4.2 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	REFRESH; ALSO REQUIRES VDD 12 V	e0		20.2 mm	150 ns
TMM41257AZ-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			150 ns
TMM41256C-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			120 ns
TMM4164AP-20	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			200 ns
TMM4164P-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			120 ns
TMM41256P-15	Toshiba	FAST PAGE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
TMM416D-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			250 ns
TMM41257P-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
TMM416D-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			150 ns
TMM41256AZ-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		80 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			100 ns
TMM41257AP-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		80 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			100 ns
TMM41257AP-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		72 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.