168 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KMM372F810BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
M374S0823AT0-C100	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1215 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	TIN SILVER COPPER	DUAL		R-PDMA-N168	3			100 MHz		Not Qualified	603979776 bit			e1	.018 Amp		7 ns
M364C0884CT0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	420 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		60 ns
KMM375S823CT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1127 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH		.011 Amp		6 ns
M390S3320FTU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4100 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.04 Amp		5.4 ns
KMM372C400AS-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1260 mA	4194304 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N168		5.5 V	25.4 mm			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.05 Amp		70 ns
M366S2953BTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	134217728 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	8589934592 bit	3 V	AUTO/SELF REFRESH		.032 Amp		5.4 ns
KMM366S1723T-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.008 Amp		6 ns
KMM366F224CJ1-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	568 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp		50 ns
KMM364C1680BS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			5		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
KMM366S403CT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				7 ns
M372C1600CJ0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168		5.5 V	31.75 mm			Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		60 ns
M366S1623ETS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.016 Amp		5.4 ns
M372V1680DJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		50 ns
KMM374F3200BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2016 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V	41.275 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.018 Amp		60 ns
M374S1723DTS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1710 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.018 Amp		6 ns
KMM374S403CT-GH0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		4MX72	4M		DUAL	1	R-XDMA-N168		3.6 V	35.055 mm		3.81 mm		301989888 bit	3 V	AUTO/SELF REFRESH; WD-MAX			133.35 mm	6 ns
KMM364C410BS-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1600 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		70 ns
M377S3323BT0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2660 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.02 Amp		6 ns
KMM372V400AK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.05 Amp		60 ns
KMM366S1623CT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	2	R-XDMA-N168		3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V			.016 Amp		6 ns
KMM372V402AS-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1260 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.05 Amp		70 ns
KMM377S823BT1-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1350 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	1	R-XDMA-N168		3.6 V		125 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH		.01 Amp		6 ns
M377S1620CT2-C1H0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2450 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	TIN SILVER COPPER	DUAL		R-PDMA-N168	3			100 MHz		Not Qualified	1207959552 bit			e1	.02 Amp		6 ns
KMM374S203CT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	885 mA	2097152 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M		DUAL	1	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	150994944 bit	3 V	AUTO/SELF REFRESH		.009 Amp		6 ns
KMM372F803CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
M377S6450CT3-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3920 mA	67108864 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M		DUAL		R-PDMA-N168				100 MHz		Not Qualified	4831838208 bit				.038 Amp		6 ns
KMM372V3200BK4-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2080 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V	50.8 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		60 ns
M374S1723DTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.018 Amp		5.4 ns
M377S6428AT3-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M		DUAL	1	R-XDMA-N168	1	3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH				6 ns
KMM374F410CK1-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	2	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.009 Amp		50 ns
KMM372V1600CS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
M366S6453DTS-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		.032 Amp		6 ns
M372V3200DT1-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1998 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V	53.34 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		50 ns
M366S3253DTU-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.016 Amp		5.4 ns
KMM390S3320BT1-GA	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4460 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.02 Amp		5.4 ns
KMM366F1680CK2-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	2	R-XDMA-N168		3.6 V				Not Qualified	1073741824 bit	3 V			.008 Amp		50 ns
M374S3253DTU-L7C	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.018 Amp		5.4 ns
KMM366S424DTS-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				6 ns
M372E1600BJ0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2160 mA	16777216 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168		5.5 V	31.75 mm			Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		50 ns
M374S3253CTU-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1710 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.018 Amp		6 ns
M372V3200DJ3-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1998 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V	41.91 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		50 ns
M364C0884BT0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	460 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		50 ns
KMM372V3200AK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2620 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168		3.6 V	59.69 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		60 ns
KMM372C883CK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	8388608 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		50 ns
M372F1600ET0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	1	3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.03 Amp		60 ns
KMM372C803CK-600	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		72	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		8MX72	8M		UNSPECIFIED	1	R-XXMA-N168		5.5 V	31.88 mm		5.08 mm		603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; WD-MAX			133.35 mm	60 ns
KMM366S203CT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168		3.6 V		125 MHz		Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		.008 Amp		6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.