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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Access Time
M463L0914BT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172	1	2.7 V	100 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L1624BT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1020 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	100 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L1624DT0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172	1	2.7 V	166 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.7 ns
M463L1624BT0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L1624DT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L1624DT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914BT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172	1	2.7 V	100 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L0914BT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172	1	2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L1624DT0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L1624BT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1380 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	166 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.7 ns
M463L1624DT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L1624DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172	1	2.7 V	166 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.7 ns
M463L1624BT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V	100 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L0914DT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1020 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	100 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L1624DT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L0914BT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172	1	2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1380 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	166 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.7 ns
M463L0914BT0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172	1	2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L1624BT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V	100 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.8 ns
M463L1624BT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914DT0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L1624DT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
M463L0914BT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N172	1	2.7 V	133 MHz	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.75 ns
MT4VDDT864WY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	GOLD	DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e4			.75 ns
MT4VDDT3264WY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M	MATTE TIN	DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	2147483648 bit			e3			.75 ns
MT4VDDT1664WG-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		30	235	.75 ns
MT4VDDT3264WG-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1600 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	2147483648 bit						.75 ns
MT4VDDT1664WY-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	GOLD	DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e4			.7 ns
MT4VDDT1664WG-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		30	235	.75 ns
MT4VDDT3264WG-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		30	235	.75 ns
MT4VDDT1664WY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	MATTE TIN	DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	1073741824 bit			e3			.75 ns
MT4VDDT864WY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	GOLD	DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e4			.75 ns
MT4VDDT1664WG-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL		R-PDMA-N172	1		166 MHz	Not Qualified	1073741824 bit						.7 ns
MT4VDDT1664WY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	GOLD	DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e4			.75 ns
MT4VDDT3264WY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	GOLD	DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4			.75 ns
MT4VDDT864WY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M	MATTE TIN	DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	536870912 bit			e3			.75 ns
MT4VDDT864WG-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	536870912 bit						.75 ns
MT4VDDT1664WY-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	MATTE TIN	DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	1073741824 bit			e3			.75 ns
MT4VDDT864WG-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		30	235	.75 ns
MT4VDDT3264WY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1600 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M	MATTE TIN	DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	2147483648 bit			e3			.75 ns
MT4VDDT864WG-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N172	1		133 MHz	Not Qualified	536870912 bit						.75 ns
MT4VDDT3264WG-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M		DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		30	235	.7 ns
MT4VDDT3264WY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	172	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	GOLD	DUAL	1	R-XDMA-N172		2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4			.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.