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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length
MT61M256M32JE-12AAT:A	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16		.75 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm	1500 MHz	12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH					14 mm
MT61K256M32JE-14:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260		14 mm
MT61K256M32JE-21:T	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16		.75 mm	95 Cel	OPEN-DRAIN	256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V					14 mm
MT61K512M32KPA-16:BTR	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES	COMMON	1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30			.75 mm	95 Cel		512MX32	512M	0 Cel		BOTTOM	1	R-PBGA-B180		1.3905 V	1.2 mm		12 mm		17179869184 bit	1.3095 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY		NOT SPECIFIED	NOT SPECIFIED		14 mm
MT61K256M32JE-19G:T	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16		.75 mm	95 Cel	OPEN-DRAIN	256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V					14 mm
MT61K512M32KPA-16:B	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30			.75 mm	95 Cel		512MX32	512M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V		NOT SPECIFIED	NOT SPECIFIED		14 mm
MT61K512M32KPA-14:B	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30			.75 mm	95 Cel		512MX32	512M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V					14 mm
UPD48011436FF-FH12-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	4		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	800 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
UPD48011336FF-FH16-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	2		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	600 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
UPD48011318FF-FH16-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	2		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	600 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
UPD48011418FF-FH12-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	4		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	800 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
RMHE41A364AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40			1 mm			32MX36	32M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH				4	18.5 mm
RMHE41A184AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40			1 mm			64MX18	64M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH				4	18.5 mm
RMHE41A184AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40			1 mm			64MX18	64M			BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH				4	18.5 mm
UPD48011336FF-FH19-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	2		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	525 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
RMHE41A364AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40			1 mm			32MX36	32M			BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH				4	18.5 mm
UPD48011418FF-FH15-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	4		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	667 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
UPD48011318FF-FH19-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	2		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	525 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
UPD48011436FF-FH15-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	4		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40		DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	667 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				18.5 mm
K4ZAF325BM-HC160	Samsung	GDDR6 DRAM		180		16384	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		536870912 words						32								512MX32	512M			BOTTOM	1	R-PBGA-B180							17179869184 bit
MT61K256M32JE-13:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.3905 V	1.2 mm		12 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH	e1	30	260		14 mm
MT61M256M32JE-12NIT:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	INDUSTRIAL	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260		14 mm
MT61M256M32JE-12N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260		14 mm
MT61K256M32JE-16:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH					14 mm
MT61M256M32JE-10N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260		14 mm
MT61K256M32JE-12:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260		14 mm
MT61K512M32KPA-14:BTR	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES	COMMON	1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30			.75 mm	95 Cel		512MX32	512M	0 Cel		BOTTOM	1	R-PBGA-B180		1.3905 V	1.2 mm		12 mm		17179869184 bit	1.3095 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY		NOT SPECIFIED	NOT SPECIFIED		14 mm
MT61M256M32JE-10AAT:A	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16		.75 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm	1500 MHz	12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH					14 mm
MT61M256M32JE-10NIT:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	INDUSTRIAL	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260		14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.