Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
4194304 words |
5 |
1 |
IN-LINE |
1.27 mm |
125 Cel |
4MX1 |
4M |
-55 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
11.42 mm |
2.85 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
26.67 mm |
80 ns |
||||||||||||||||||||||||||
Texas Instruments |
NIBBLE MODE DRAM |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NIBBLE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
1048576 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
3-STATE |
1MX1 |
1M |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
17.145 mm |
100 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
105 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.14 mm |
60 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
J BEND |
ASYNCHRONOUS |
105 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.145 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
55 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
120 ns |
|||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
1 |
R-PDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
24.325 mm |
120 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS/SELF REFRESH |
17.14 mm |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SOJ |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
YES |
1 |
CMOS |
MIL-STD-883 |
J BEND |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
-55 Cel |
DUAL |
1 |
R-XDSO-J20 |
5.5 V |
2.54 mm |
8.385 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.145 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SON |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.34 mm |
8.89 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
60 mA |
4194304 words |
NO |
SEPARATE |
3.3 |
3.3 |
1 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0003 Amp |
17.14 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DFP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
FLAT |
ASYNCHRONOUS |
1048576 words |
5 |
1 |
FLATPACK |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
1 |
R-CDFP-F20 |
5.5 V |
2.41 mm |
9.655 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.015 mm |
150 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
95 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
75 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
80 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
SYNCHRONOUS |
60 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.34 mm |
8.89 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
17.145 mm |
120 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
95 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
ZIG-ZAG |
R-PZIP-T20 |
Not Qualified |
1048576 bit |
.002 Amp |
60 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
65 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
R-PDSO-J20 |
Not Qualified |
4194304 bit |
.002 Amp |
120 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
55 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
1.83 mm |
7.47 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
16.51 mm |
120 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2-R |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
17.14 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS |
17.145 mm |
80 ns |
||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2-R |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
J BEND |
ASYNCHRONOUS |
90 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
ASYNCHRONOUS |
85 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
4MX1 |
4M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.145 mm |
80 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DFP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
SYNCHRONOUS |
75 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL20,.4 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
1 |
R-CDFP-F20 |
5.5 V |
2.41 mm |
9.655 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
17.015 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2-R |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
1 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
17.14 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
STATIC COLUMN DRAM |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
STATIC COLUMN |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
2.54 mm |
3-STATE |
256KX4 |
256K |
DUAL |
1 |
R-PDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
24.325 mm |
150 ns |
||||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
20 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
GULL WING |
ASYNCHRONOUS |
80 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.14 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
80 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
R-PDSO-J20 |
Not Qualified |
1048576 bit |
.002 Amp |
70 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
80 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
17.145 mm |
70 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
MIL-PRF-38535 |
NO LEAD |
SYNCHRONOUS |
60 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.34 mm |
8.89 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
17.145 mm |
120 ns |
|||||||||||||||
Texas Instruments |
NIBBLE MODE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NIBBLE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
75 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
17.145 mm |
80 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
CAS BEFORE RAS/SELF REFRESH |
17.14 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
2.54 mm |
3-STATE |
256KX4 |
256K |
DUAL |
1 |
R-PDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
24.325 mm |
150 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
SYNCHRONOUS |
80 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.145 mm |
100 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2-R |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
5 |
1 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
ZIG-ZAG |
R-PZIP-T20 |
Not Qualified |
1048576 bit |
.002 Amp |
70 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
2.54 mm |
3-STATE |
256KX4 |
256K |
DUAL |
1 |
R-PDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
24.325 mm |
120 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
4MX1 |
4M |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
1.93 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
17.145 mm |
80 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DIP |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
ASYNCHRONOUS |
90 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP20,.4 |
DRAMs |
2.54 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-XDIP-T20 |
5.5 V |
4.44 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
25.525 mm |
80 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
70 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
MOS |
MIL-PRF-38535 |
NO LEAD |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.34 mm |
8.89 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
17.145 mm |
100 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.34 mm |
8.89 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
ASYNCHRONOUS |
70 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
4MX1 |
4M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.145 mm |
120 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
4 |
IN-LINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DIP |
1024 |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
FAST PAGE |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
ASYNCHRONOUS |
80 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP20,.3 |
DRAMs |
2.54 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-GDIP-T20 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
100 ns |
|||||||||||||||||
Texas Instruments |
NIBBLE MODE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NIBBLE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
95 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DIP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
NO |
1 |
CMOS |
MIL-PRF-38535 |
THROUGH-HOLE |
SYNCHRONOUS |
55 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
-55 Cel |
DUAL |
1 |
R-CDIP-T20 |
5.5 V |
10.92 mm |
2.92 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
26.67 mm |
150 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
75 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
ZIG-ZAG |
R-PZIP-T20 |
Not Qualified |
1048576 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.