232 DRAM 73

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
MD16R162GDF0-CM9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1624DF0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	32MX36	32M		DUAL	1	R-XDMA-N232	1	2.63 V	1200 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MD16R162GEG0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3010 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH			1.146 Amp	40 ns
MD18R1628DF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1628DF0-CK8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1624DF0-CK8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						32MX36	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MD16R162GDF0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	128MX32	128M		DUAL	1	R-XDMA-N232	1	2.63 V	1200 MHz	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MD18R1628AF0-CM9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD16R162GDF0-CK8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628AF0-CM9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1624DF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						32MX36	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MD18R326GAG0-CM8	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3350 mA	268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX36	256M	0 Cel	DUAL	1	R-XDMA-N232		2.63 V	400 MHz	Not Qualified	9663676416 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	1.496 Amp	40 ns
MD18R3268AG0-CT9	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2820 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX36	128M	0 Cel	DUAL	1	R-XDMA-N232		2.63 V	533 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	1.824 Amp	32 ns
MD18R1624DF0-CT9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						32MX36	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MD18R162GAF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						128MX36	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628DF0-CT9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628DF0-CM9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MD18R162GDF0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	128MX36	128M		DUAL	1	R-XDMA-N232	1	2.63 V	1200 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MD16R162GEG0-CT9	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3640 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH			1.436 Amp	32 ns
MD18R162GAF0-CM9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						128MX36	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1628DF0-CM9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1624EG0-CT9	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1720 mA	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH			1.388 Amp	32 ns
MD18R1628AF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD18R162GDF0-CK8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						128MX36	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH
MD16R162GDF0-CT9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD18R326GAG0-CT9	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4100 mA	268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX36	256M	0 Cel	DUAL	1	R-XDMA-N232		2.63 V	533 MHz	Not Qualified	9663676416 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	1.856 Amp	32 ns
MD16R162GDF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1628DF0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD16R162GAF0-CM9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1624DF0-CM9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1624AF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						32MX36	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628EG0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1930 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH			1.114 Amp	40 ns
MD16R1628EG0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2580 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH			1.574 Amp	32 ns
MD16R1628AF0-CN9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MD18R1628AF0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						64MX36	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628DF0-CK8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						64MX32	64M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MD18R3268AG0-CN1	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2950 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX36	128M	0 Cel	DUAL	1	R-XDMA-N232		2.63 V	600 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	1.944 Amp	32 ns
MD16R1624DF0-CN9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MD18R162GAF0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						128MX36	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH
MD18R162GDF0-CM9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						128MX36	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1624AF0-CN9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628DF0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	64MX32	64M		DUAL	1	R-XDMA-N232	1	2.63 V	1200 MHz	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MD18R1628DF0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	64MX36	64M		DUAL	1	R-XDMA-N232	1	2.63 V	1200 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MD18R1624AF0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		36	MICROELECTRONIC ASSEMBLY						32MX36	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1624AF0-CM9	Samsung	RAMBUS DRAM MODULE		232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1624DF0-CK8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MD16R162GDF0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY						128MX32	128M		DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD18R3268AG0-CM8	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2270 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX36	128M	0 Cel	DUAL	1	R-XDMA-N232		2.63 V	400 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	1.464 Amp	40 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.