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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M378T6453FZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2600 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		266 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.128 Amp		.5 ns
M391B5673FH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1845 mA	268435456 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH			260	.18 Amp	133.35 mm	20 ns
M395T5750EZ4-CE61	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4000 mA	268435456 words	YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED
M378T3253FZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2040 mA	33554432 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	32MX64	32M	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.064 Amp		.6 ns
M391B5673GB0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1305 mA	268435456 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	667 MHz	4 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.18 Amp	133.35 mm	.255 ns
M393T5750BS0-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	7140 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	TIN LEAD	DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e0					.5 ns
M393B2873GB0-CMA	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	134217728 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	933 MHz		Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH			260	.72 Amp	133.35 mm	20 ns
M391T2863DZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2340 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240	3	1.9 V	4 mm	400 MHz	30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH			260	.135 Amp	133.35 mm	.4 ns
M378T2953EZ3-CE7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp		.4 ns
M391T2953EZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1935 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH			260			.5 ns
M378T3253FG0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2040 mA	33554432 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	32MX64	32M	TIN LEAD	DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e0			.064 Amp		.6 ns
M393B2K70BM1-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6780 mA	2147483648 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G		DUAL	1	R-XDMA-N240		1.575 V	4 mm	400 MHz	30 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		133.35 mm
M392B2G73AM0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3230 mA	2147483648 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	2GX72	2G		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	667 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH			260		133.35 mm	.255 ns
M391T2953BZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3015 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240	2	1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH						.6 ns
M393B2G70QH0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		2GX72	2G		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm		4 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					133.35 mm
M378B2873GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	134217728 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH			260	.08 Amp	133.35 mm	.3 ns
M391T6553CZ0-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M		DUAL	1	R-XDMA-N240	2	1.9 V		333 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH				.072 Amp		.45 ns
M391T2863DZ3-CE7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2385 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240		1.9 V	4 mm	400 MHz	30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.135 Amp	133.35 mm	.4 ns
M393T5160CZ0-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240	2	1.9 V		267 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH			260			.5 ns
M393B5270DH0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2540 mA	536870912 words	YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240		1.45 V		533 MHz		Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.69 Amp	133.35 mm	.3 ns
M393T5160DZA-CE6	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6400 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH			260	.54 Amp		.45 ns
M378T2953EZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1720 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp		.5 ns
M391T2863AZ3-CCC000	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		128MX72	128M		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH						.6 ns
M393B5273DH0-K00	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH					133.35 mm	.225 ns
M378T2953EZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp		.4 ns
M393B5273DH0-H90	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH					133.35 mm	.25 ns
M391B2873EH1-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240		1.575 V		800 MHz		Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.225 ns
M393B5273DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2065 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	667 MHz	4 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.796 Amp	133.35 mm	.255 ns
M378B2873FHS-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				95 Cel		128MX64	128M		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH						.225 ns
M392T5663CZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3795 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240	2	1.9 V		333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH						.45 ns
M391T3253FG0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2295 mA	33554432 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	230	.072 Amp		.6 ns
M393T2953EZA-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.6 ns
M395T5663QZ4-CD58	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3500 mA	268435456 words	YES	COMMON	1.5	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240	3	1.575 V		266 MHz		Not Qualified	19327352832 bit	1.455 V	AUTO/SELF REFRESH			260
M391B5273DH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	800 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH				.216 Amp	133.35 mm	20 ns
M395T5750CZ4-CD510	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M		DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH
M395T5166AZ4-CD501/E601	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M		DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH
M393B1G73BH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2505 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	800 MHz	4 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX			260	.5 Amp	133.35 mm	.225 ns
M378B1G73AH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	1073741824 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	1GX64	1G		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	68719476736 bit	1.425 V	AUTO/SELF REFRESH			260		133.35 mm	20 ns
M378B1G73AH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	1073741824 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	1GX64	1G		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz		Not Qualified	68719476736 bit	1.425 V	AUTO/SELF REFRESH			260		133.35 mm	20 ns
M392B1K73DM0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2049 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		DUAL	1	R-XDMA-N240	2	1.575 V	18.9 mm	533 MHz		Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH				.972 Amp	133.35 mm	20 ns
M393B1G70QH0-CMA	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		4 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378T6553BG3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N240	1	1.9 V		267 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH				.064 Amp		.5 ns
M393T6450FG3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5210 mA	67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	TIN LEAD	DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e0			.724 Amp		.6 ns
M393T5660QZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4920 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260	.85 Amp		.45 ns
M393B5270DH0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2530 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz	4 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED	.756 Amp	133.35 mm	.3 ns
M392B5270DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2920 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	667 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.796 Amp	133.35 mm	20 ns
M378T5663DZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M		DUAL	1	R-XDMA-N240		1.9 V	4 mm	200 MHz	30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.24 Amp	133.35 mm	.6 ns
M393B1K70DH0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2836 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz	4 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.972 Amp	133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.