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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MTA144ASQ16G72PSZ-3S2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		16GX72	16G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF2G72PZ-2G9	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		NO		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288			1466.2 MHz		154618822656 bit			NOT SPECIFIED	NOT SPECIFIED
MTA72ASS8G72PSZ-2S6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		8GX72	8G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF1G72PKIZ-3G2XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	-40 Cel	DUAL	1	R-XDMA-N288	1.26 V	30.15 mm		4 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					80 mm
MTA18ASF1G72PDZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.85 mm	85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72AZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF2G72PZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ADF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,24	.6 mm	95 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.25 mm
MTA8ATF1G64AZ-2G3A1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1204 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA9ADF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA4ATF25664AZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel		256MX64	256M	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.7 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72PDZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA4ATF51264AZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel		512MX64	512M	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA8ATF1G4AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel		1GX64	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH					133.35 mm
MTA36ASF4G72PZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTC16C2085S1UC56BA1	Micron Technology	DDR5 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.1	64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G	0 Cel	DUAL	1	R-XDMA-N288			2801.1 MHz		274877906944 bit		SELF REFRESH
MTC16C2085S1UC48BA1	Micron Technology	DDR5 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	993 mA	4294967296 words		YES		1.1	64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G	0 Cel	DUAL	1	R-XDMA-N288			2403.8 MHz		274877906944 bit		SELF REFRESH			.086 Amp
MTA36ASF4G72PBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		SYNCHRONOUS	4698 mA	4294967296 words		YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel		4GX72	4G	-40 Cel	DUAL	1	R-XDMA-N288	1.26 V		1600 MHz		309237645312 bit	1.14 V				.72 Amp
MTA36ASF2G72LZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF4G72PZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.85 mm	85 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA16ATF1G64AZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel		1GX64	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ADF1G72PKIZ-2G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel		1GX72	1G	-40 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		4 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					80 mm
MTA18ASF2G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA144ASQ16G72PSZ-3S2XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		16GX72	16G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA72ASS4G72LZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72PZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ADF4G72PZ-2G9XX	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288			1466.2 MHz		309237645312 bit		AUTO/SELF REFRESH
MTA18ASF1G72AZ-2G4XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF4G72PZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1612 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72PDZ-2G3D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1204 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF1G72PF1Z-2G3XXXXX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		6.24 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA9ASF1G72AZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.7 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF51272PZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.85 mm	85 Cel		512MX72	512M	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA8ATF2G64AZ-2G6F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1304 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G	0 Cel	DUAL	1	R-XDMA-N288		31.25 mm	1333.3 MHz		137438953472 bit		AUTO/SELF REFRESH			.304 Amp		133.35 mm
MTA36ASF4G72LZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72PDZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.