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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Maximum Access Time
MT3D2569N-7	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			240 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm	Not Qualified	2359296 bit			e0	.003 Amp	70 ns
MT3D2569MP-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	270 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.003 Amp	60 ns
MT4C4001JD22ADX1-6	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words		5		4	UNCASED CHIP					3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C1004JD22AWX1-8	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		5		1	UNCASED CHIP					3-STATE	4MX1	4M			UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT3D2569MPL-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	270 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0006 Amp	60 ns
MT9D49NL-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	810 mA	4194304 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX9	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0018 Amp	80 ns
MT9D169N-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	720 mA	16777216 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	16MX9	16M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	24.003 mm	Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.009 Amp	70 ns
MT3D19NL-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	250 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0006 Amp	80 ns
MT3D2569N-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			180 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm	Not Qualified	2359296 bit			e0	.003 Amp	100 ns
MT3D2569MP-10	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			12.1412 mm	Not Qualified	2359296 bit				.003 Amp	100 ns
MT9257M-20	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			16.51 mm	Not Qualified	2359296 bit					200 ns
MT4LC4001JD22ADC2	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words		3.3		4	UNCASED CHIP					3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4LC4001JD22ADC1	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words		3.3		4	UNCASED CHIP					3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT9257M-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			16.51 mm	Not Qualified	2359296 bit					100 ns
MT9257M-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			16.51 mm	Not Qualified	2359296 bit					120 ns
MT8D48NL-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	880 mA	4194304 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0016 Amp	60 ns
MT2D18NL-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	220 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0004 Amp	80 ns
MT4C4001JD22ADC2-7	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words		5		4	UNCASED CHIP					3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT8D168M-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	16777216 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	16MX8	16M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	23.114 mm	Not Qualified	134217728 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.008 Amp	60 ns
MT8D48N-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	880 mA	4194304 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.2852 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	60 ns
MT8D168N-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	560 mA	16777216 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	24.003 mm	Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	80 ns
MT4C1004JD22ADX1	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		5		1	UNCASED CHIP					3-STATE	4MX1	4M			UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT8D48N-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	800 mA	4194304 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.2852 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	70 ns
MT3D19NL-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	310 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0006 Amp	60 ns
MT8D18ML-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	20.574 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH		.0016 Amp	70 ns
MT3D2569N-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			210 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm	Not Qualified	2359296 bit			e0	.003 Amp	80 ns
MT2D2568M-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp	60 ns
MT8D168N-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	640 mA	16777216 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	24.003 mm	Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	70 ns
MT2D18ML-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH		.0004 Amp	60 ns
MT88512DN-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS			810 mA	524288 words	COMMON			8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	4194304 bit			e0		200 ns
MT8C8024DMN-10	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			400 mA	1048576 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					12.954 mm	Not Qualified	8388608 bit			e0	.008 Amp	100 ns
MT3D2569NP-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	210 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm	Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.003 Amp	80 ns
MT2D18N-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	220 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	60 ns
MT9D19NL-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0018 Amp	80 ns
MT9D19M-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	20.574 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.009 Amp	80 ns
MT9D49N-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	990 mA	4194304 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX9	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.009 Amp	60 ns
MT4C1004JD22AWX1-7	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		5		1	UNCASED CHIP					3-STATE	4MX1	4M			UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT8D18NL-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	720 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0016 Amp	60 ns
MT3D19M-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	250 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.003 Amp	80 ns
MT8C8256M-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD		80 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30			16.51 mm	Not Qualified	2097152 bit					150 ns
MT8D18NL-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	560 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0016 Amp	80 ns
MT3D19M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	280 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.003 Amp	70 ns
MT8C9024DMN-12	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			450 mA	1048576 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					12.954 mm	Not Qualified	9437184 bit			e0	.009 Amp	120 ns
MT9D169M-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	16777216 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	16MX9	16M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	23.114 mm	Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.009 Amp	60 ns
MT2D2568ML-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	160 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0004 Amp	70 ns
MT3D2569MP-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.003 Amp	70 ns
MT2D2568N-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	160 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	70 ns
MT2D18ML-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	200 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH		.0004 Amp	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.