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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Access Time
TM4161EV4-15L	Texas Instruments	VIDEO DRAM MODULE	COMMERCIAL	31		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS	65536 words	5	4	MICROELECTRONIC ASSEMBLY	SIP31,.2	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	SINGLE	2	R-XSMA-T31	5.5 V	Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH; 256 X 4 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	150 ns
TM4161EV4-20L	Texas Instruments	VIDEO DRAM MODULE	COMMERCIAL	31		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS	65536 words	5	4	MICROELECTRONIC ASSEMBLY	SIP31,.2	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	SINGLE	2	R-XSMA-T31	5.5 V	Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH; 256 X 4 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	200 ns
MT4C1004JD30ADC7-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C4001JD30ADC7-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C1004JD30ADC2	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD30AWC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C4001JD30ADC2-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30AWC2	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC2-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C4001JD30ADC3	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC3-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30AWC1	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC2	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC7-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C1004JD30ADC3-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C1004JD30ADC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C4001JD30AWC2	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30AWC2-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C4001JD30ADC3-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C1004JD30ADC2-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30ADC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C4001JD30ADC1	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD30ADC7-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C4001JD30AWC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30ADC1	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC3-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C1004JD30ADC3-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C1004JD30ADC7-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30ADC3	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30AWC2-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C1004JD30ADC2-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C1004JD30AWC2-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30AWC2-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
MT4C1004JD30AWC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C4001JD30ADC7-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C4001JD30AWC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C4001JD30ADC7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
MT4C4001JD30AWC1	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1048576 words	5	4	UNCASED CHIP					3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30ADC3-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
MT4C1004JD30ADC7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4194304 words	5	1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31		Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.