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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
HYB3165400T-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	50 ns
HYB3165800T-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	60 ns
HYB3164405J-50	Infineon Technologies	EDO DRAM	COMMERCIAL	34	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		16MX4	16M		DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	50 ns
HYB3165805T-50	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		8MX8	8M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	50 ns
HYB3165805T-60	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		8MX8	8M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	60 ns
HYB3165805TL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		8MX8	8M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	60 ns
HYB3164800J-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0	.0002 Amp		60 ns
HYB3164405J-60	Infineon Technologies	EDO DRAM	COMMERCIAL	34	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		16MX4	16M		DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	60 ns
HYB3164400J-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0	.0002 Amp		50 ns
HYB3165805TL-50	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		8MX8	8M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	50 ns
HYB3165400J-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	TIN LEAD	DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	50 ns
HYB3164800J-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0	.0002 Amp		50 ns
HYB3164400T-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0	.0002 Amp		50 ns
HYB3165805J-50	Infineon Technologies	EDO DRAM	COMMERCIAL	34	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		8MX8	8M		DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	50 ns
HYB3165400J-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	TIN LEAD	DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	60 ns
HYB3164800T-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0	.0002 Amp		50 ns
HYB3164405TL-50	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX4	16M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	50 ns
HYB3164405TL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX4	16M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	60 ns
HYB3165800J-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	50 ns
HYB3164400J-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0	.0002 Amp		60 ns
HYB3165400T-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	60 ns
HYB3165800J-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	60 ns
HYB3164400T-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0	.0002 Amp		60 ns
HYB3164405T-50	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX4	16M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	50 ns
HYB3164800T-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0	.0002 Amp		60 ns
HYB3165805J-60	Infineon Technologies	EDO DRAM	COMMERCIAL	34	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		8MX8	8M		DUAL	1	R-PDSO-J34	3.6 V	3.76 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	60 ns
HYB3164405T-60	Infineon Technologies	EDO DRAM	COMMERCIAL	34	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX4	16M		DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			22.25 mm	60 ns
HYB3165800T-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	22.25 mm	50 ns
UPD42S65400G7-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			80 ns
UPD42S64400LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			80 ns
UPD42S65800LG-A50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			50 ns
UPD42S65400LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			60 ns
UPD42S65800G7-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			80 ns
UPD42S65400G7-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			70 ns
UPD4265800G7-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			60 ns
UPD4264800G7-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			60 ns
UPD4264400G7-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			80 ns
UPD4265800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			80 ns
UPD4265400LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			60 ns
UPD4264400G7-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			60 ns
UPD42S65800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			80 ns
UPD42S64400LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			60 ns
UPD4264800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			80 ns
UPD42S65400G7-A50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			50 ns
UPD42S65800LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			60 ns
UPD4265400LG-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			70 ns
UPD42S64800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0			80 ns
UPD4265800G7-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34				Not Qualified	67108864 bit			e0			80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.