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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length
TC59R1809HK	Toshiba	RAMBUS DRAM	COMMERCIAL	36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		9	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.65 mm	70 Cel	3-STATE	2MX9	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	3.6 V	1.7 mm		11 mm	Not Qualified	18874368 bit	3 V	SELF REFRESH	e0		25 mm
TC59R0808HK	Toshiba	RAMBUS DRAM	COMMERCIAL	36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words	YES		3.3		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.65 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	3.6 V	1.7 mm		11 mm	Not Qualified	8388608 bit	3 V	SELF REFRESH	e0		25 mm
UPD488031LG6-A50	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	36	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		480 mA	1048576 words		COMMON	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP36,.5	DRAMs	.635 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G36					Not Qualified	8388608 bit			e0	.135 Amp
KM48RC2H-A53	Samsung	RAMBUS DRAM		36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm		3-STATE	2MX8	2M		TIN LEAD	DUAL	1	R-PDSO-G36	3.45 V	1.7 mm	533 MHz		Not Qualified	16777216 bit	3.15 V		e0	.001 Amp	25.1 mm
KM49RC2H-A53	Samsung	RAMBUS DRAM		36	LSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm		3-STATE	2MX9	2M		TIN LEAD	DUAL	1	R-PDSO-G36	3.45 V	1.7 mm	533 MHz		Not Qualified	18874368 bit	3.15 V		e0	.001 Amp	25.1 mm
KM48RC2H-A66	Samsung	RAMBUS DRAM		36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm		3-STATE	2MX8	2M		TIN LEAD	DUAL	1	R-PDSO-G36	3.45 V	1.7 mm	667 MHz		Not Qualified	16777216 bit	3.15 V		e0	.001 Amp	25.1 mm
KM49RC2H-A60	Samsung	RAMBUS DRAM		36	LSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm		3-STATE	2MX9	2M		TIN LEAD	DUAL	1	R-PDSO-G36	3.45 V	1.7 mm	600 MHz		Not Qualified	18874368 bit	3.15 V		e0	.001 Amp	25.1 mm
KM48RC2H-A60	Samsung	RAMBUS DRAM		36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm		3-STATE	2MX8	2M		TIN LEAD	DUAL	1	R-PDSO-G36	3.45 V	1.7 mm	600 MHz		Not Qualified	16777216 bit	3.15 V		e0	.001 Amp	25.1 mm
KM49RC2H-A66	Samsung	RAMBUS DRAM		36	LSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm		3-STATE	2MX9	2M		TIN LEAD	DUAL	1	R-PDSO-G36	3.45 V	1.7 mm	667 MHz		Not Qualified	18874368 bit	3.15 V		e0	.001 Amp	25.1 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.