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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM416C157BLLTR-5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.00015 Amp	18.41 mm	50 ns
KM416V256BLT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	18.41 mm	60 ns
KM416V254DJ-L8	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.0001 Amp		80 ns
KM418C256ALLTR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	YES	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00015 Amp	18.41 mm	80 ns
KM418C256J-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	130 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.035 mm	80 ns
KM428C258T-8	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	145 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	80 ns
KM416V254DLT-8	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		3-STATE	256KX16	256K		DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			18.41 mm	80 ns
KM416V254DJ-L7	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN/SELF REFRESH	e0	.0001 Amp	26.04 mm	70 ns
KM418C256Z-10	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words	NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm	2.96 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp		100 ns
KM428C256Z-8	Samsung	VIDEO DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	150 mA	262144 words			5	5	8	IN-LINE	ZIP40,.1	Other Memory ICs	1.27 mm	70 Cel		3-STATE	256KX8	256K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T40	5.5 V	12.07 mm	2.96 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0	.01 Amp		80 ns
KM416C157BJ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	25.535 mm	80 ns
KM416C256ALLTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00015 Amp	18.41 mm	60 ns
KM416V254DLJ-6	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.0001 Amp	26.04 mm	60 ns
KM416C256AT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	70 ns
KM416V256BLTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	18.41 mm	60 ns
KM416C256BLLT-5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.00015 Amp	18.41 mm	50 ns
KM418V256ALT-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	262144 words	NO	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0001 Amp	18.41 mm	80 ns
KM418C256BT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	70 ns
KM428C257T-7	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	165 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	70 ns
KM416C156BTR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	75 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	80 ns
KM428C257T-6	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	185 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	60 ns
KM428C257TR-6	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	185 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	60 ns
KM416V256BT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp	18.41 mm	70 ns
KM418C256AJ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.04 mm	70 ns
KM416V254BLT-6	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	18.41 mm	60 ns
KM416C64T-L6	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	65536 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.00015 Amp	18.41 mm	60 ns
KM418V256AZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	262144 words	NO	COMMON	3.3	3.3	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	3.6 V	12.06 mm	2.96 mm	Not Qualified	4718592 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0005 Amp		80 ns
KM416V254BLLJ-8	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	3.6 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	25.535 mm	80 ns
KM416C256D-JL6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.00015 Amp	26.04 mm	60 ns
KM416V256BLLT-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	75 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	18.41 mm	80 ns
KM418C256SLJ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	130 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.035 mm	80 ns
KM416C157BLJ-5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	85 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	5.25 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	25.535 mm	50 ns
KM416C254BLTR-5	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0002 Amp	18.41 mm	50 ns
KM418V256ATR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	262144 words	NO	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0005 Amp	18.41 mm	80 ns
KM416C156BLJ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	25.535 mm	60 ns
KM416C256ALZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.06 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp		80 ns
KM416C256SLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	145 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp		70 ns
KM428C128Z-10	Samsung	VIDEO DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	140 mA	131072 words			5	5	8	IN-LINE	ZIP40,.1	Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T40	5.5 V	12.07 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.005 Amp		100 ns
KM416C256ALZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.06 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp		60 ns
KM416C157BTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	60 ns
KM416V256DJ-L8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.0001 Amp		80 ns
KM416C157BT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	70 ns
KM416C254BLLJ-6	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	25.535 mm	60 ns
KM416C254BLLJ-7	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	25.535 mm	70 ns
KM416V254BLTR-6	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	18.41 mm	60 ns
KM416C254DLT-6	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.00015 Amp	18.41 mm	60 ns
KM416V254DLT-7	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.0001 Amp	18.41 mm	70 ns
KM416V256ALLTR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.0001 Amp	18.41 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.