40 DRAM 1,910

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS44165-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	26.035 mm	60 ns
TMS45160DZP-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	SYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE				70 Cel		256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						80 ns
TMS44165P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00035 Amp	26.035 mm	60 ns
TMS45160DZ-60	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	SYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE				70 Cel		256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						60 ns
TMS45169-70DGE	Texas Instruments	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL		R-PDSO-G40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
TMS44165P-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					26.035 mm	100 ns
TMS45165P-10DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	100 ns
TMS44165P-70DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00035 Amp	18.41 mm	70 ns
TMS45160-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	26.035 mm	100 ns
TMS44165-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	105 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	26.035 mm	80 ns
TMS45169P-70DGE	Texas Instruments	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL		R-PDSO-G40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.00035 Amp		70 ns
TMS45160L-70DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	70 ns
TMS45165S-80DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE WRITE		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	80 ns
LC321667BJ-80	Onsemi	EDO DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-J40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC321664BT-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC322270T-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	131072 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K		DUAL		R-PDSO-G40				Not Qualified	2097152 bit						.001 Amp		80 ns
LC321664BM-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC321667BM-70	Onsemi	EDO DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC321667BT-80	Onsemi	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC321664BJ-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-J40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC321667BJ-70	Onsemi	EDO DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-J40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC322270J-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		125 mA	131072 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	128KX16	128K		DUAL		R-PDSO-J40				Not Qualified	2097152 bit						.001 Amp		70 ns
LC321664BT-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC321664BM-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC321667BM-80	Onsemi	EDO DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC321667BT-70	Onsemi	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC321664BJ-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-J40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC322270T-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	131072 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K		DUAL		R-PDSO-G40				Not Qualified	2097152 bit						.001 Amp		70 ns
HYB314171BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	105 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	60 ns
HYB314171BJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	125 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	50 ns
HYB514171BJ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		160 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0			.001 Amp		70 ns
HYB314175BJ-60	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	105 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	60 ns
HYB514265BJ-45	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	130 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	45 ns
HYB514171BJL-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	150 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE ACCESS	e0			.0002 Amp	26.16 mm	80 ns
HYB514265BJ-40	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	150 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	40 ns
HYB314175BJL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	105 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp	26.16 mm	60 ns
HYB514171BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	60 ns
HYB514265BJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	50 ns
HYB314265BJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	50 ns
HYB314171BJL-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	125 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp	26.16 mm	50 ns
HYB514175BJL-55	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	190 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.88 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	26.16 mm	55 ns
HYB514175BJ-55	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	190 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	55 ns
HYB514171BJL-85	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		140 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0			.0002 Amp		85 ns
HYB514175BJ-60	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	60 ns
HYB514265BJ-400	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	150 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.25 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	40 ns
HYB514171BJ-85	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0			.001 Amp		85 ns
HYB514175BJL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.88 mm	10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	26.16 mm	60 ns
HYB314175BJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	125 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm	10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.16 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.