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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT4C1665DJ-10L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	26.06 mm	100 ns
MT4C1665TG-10LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT4C1665Z-8L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	110 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	50.71 mm	80 ns
MT4C16260DJ-10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.06 mm	100 ns
MT4LC16256TG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.41 mm	80 ns
MT4C16257TG-6L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	195 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0	.0002 Amp	18.41 mm	60 ns
MT4C16261Z-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	190 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.25 V	12.7 mm	2.885 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	50.71 mm	60 ns
MT4C1670TG-10LTR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT4LC16257DJ-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.06 mm	80 ns
MT4LC16257DJ-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.06 mm	70 ns
MT4C1665DJ-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	70 ns
MT4C16256TG-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	195 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	60 ns
MT4C1670DJ-8LTR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	80 ns
MT4C1664DJ-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.06 mm	80 ns
MT4C1664TG-10TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT4C16259DJ-10LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	100 ns
MT42C8128DJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0		26.06 mm	100 ns
MT4C16257TG-10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	100 ns
MT4C16270TG-7TR	Micron Technology	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	70 ns
MT4LC16256DJ-8S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40(UNSPEC)	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0	.0001 Amp	26.06 mm	80 ns
MT4C16259TG-10L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	18.41 mm	100 ns
MT4C1670Z-10L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	90 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	50.71 mm	100 ns
MT4C16258TG-7S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	170 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP	e0	.0002 Amp	18.41 mm	70 ns
MT4C16259DJ-7S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP	e0	.0002 Amp	26.06 mm	70 ns
MT4C16257DJ-8STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP	e0		26.06 mm	80 ns
MT4C16258TG-10TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT4LC16270TG-8TR	Micron Technology	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	80 ns
MT43C4258ATG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	DUAL	3	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0		18.41 mm	70 ns
MT43C4258DJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	185 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	26.06 mm	100 ns
MT42C8255DJ-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.06 mm	70 ns
MT43C4258TG-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	DUAL	3	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT43C4257DJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	100 ns
MT4C1664DJ-10TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	100 ns
MT4C1670TG-7TR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	70 ns
MT4C1664TG-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	80 ns
MT42C8254DJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.06 mm	80 ns
MT42C8128TG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	131072 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.008 Amp	18.41 mm	80 ns
MT4C1671TG-8TR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	80 ns
MT4C1671TG-7L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	18.41 mm	70 ns
MT4C16259TG-7STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP	e0		18.41 mm	70 ns
MT42C8254DJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words			5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	26.06 mm	80 ns
MT4C16271DJ-7	Micron Technology	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.06 mm	70 ns
MT42C8254DJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	185 mA	262144 words			5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	26.06 mm	70 ns
MT4C16257Z-8S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	150 mA	262144 words	YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP	e0	.0002 Amp	50.71 mm	80 ns
MT42C8255RG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0		18.41 mm	70 ns
MT4C16257Z-7L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	170 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0	.0002 Amp	50.71 mm	70 ns
MT4C16260TG-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	80 ns
MT4C16256TG-10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.