60 DRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

K4T51083QQ-BCF80

Samsung

DDR2 DRAM

60

VFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

64MX8

64M

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

1.9 V

1 mm

7.5 mm

536870912 bit

1.7 V

AUTO/SELF REFRESH

e1

9.5 mm

.35 ns

K4T56083QF-GCCC

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

255 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

3

1.9 V

1.2 mm

200 MHz

11 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

e0

240

.008 Amp

4,8

13 mm

.6 ns

K4T51043QM-GLC4

Samsung

DDR2 DRAM

OTHER

60

VFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

YES

1.8

4

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

128MX4

128M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

1.9 V

1 mm

12.3 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e0

14.5 mm

.6 ns

K4H560838E-ZLB0

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

250 mA

33554432 words

2,4,8

COMMON

2.5

2.5

8

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

BOTTOM

R-PBGA-B60

3

133 MHz

Not Qualified

268435456 bit

260

.003 Amp

2,4,8

K4H510438C-ZLA2

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

325 mA

134217728 words

2,4,8

COMMON

2.5

2.5

4

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

128MX4

128M

0 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

133 MHz

Not Qualified

536870912 bit

e3

.005 Amp

2,4,8

.75 ns

K4T51043QC-ZCCCT

Samsung

DDR2 DRAM

COMMERCIAL EXTENDED

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

220 mA

134217728 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA63,9X11,32

DRAMs

.8 mm

85 Cel

3-STATE

128MX4

128M

0 Cel

BOTTOM

1

R-PBGA-B60

3

1.9 V

1.2 mm

200 MHz

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

260

.008 Amp

4,8

11 mm

.6 ns

K4X56163PG-FGCA

Samsung

DDR1 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

90 mA

16777216 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-25 Cel

BOTTOM

R-PBGA-B60

111 MHz

Not Qualified

268435456 bit

.0003 Amp

2,4,8,16

6 ns

K4H510838B-ZCB0

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

67108864 words

2,4,8

COMMON

2.5

2.5

8

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

64MX8

64M

0 Cel

BOTTOM

R-PBGA-B60

3

133 MHz

Not Qualified

536870912 bit

260

.005 Amp

2,4,8

.75 ns

K4H511638J-BCB3T

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

200 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

166 MHz

Not Qualified

536870912 bit

e3

260

.005 Amp

2,4,8

.7 ns

K4T1G084QQ-HYE60

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

225 mA

134217728 words

4,8

YES

COMMON

1.55

1.55

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

85 Cel

3-STATE

128MX8

128M

0 Cel

BOTTOM

1

R-PBGA-B60

3

1.6 V

1.2 mm

333 MHz

9 mm

Not Qualified

1073741824 bit

1.5 V

AUTO/SELF REFRESH

260

4,8

11 mm

.45 ns

K4H560838D-GLA20

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

2.5

8

GRID ARRAY, THIN PROFILE

1 mm

70 Cel

32MX8

32M

0 Cel

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

14 mm

.75 ns

K4H560438H-ZCCC0

Samsung

DDR1 DRAM

COMMERCIAL

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

300 mA

67108864 words

2,4,8

YES

COMMON

2.5

2.6

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

BOTTOM

1

R-PBGA-B60

3

2.7 V

1.2 mm

200 MHz

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

.004 Amp

2,4,8

14 mm

.65 ns

K4T56043QG-ZCCC

Samsung

CACHE DRAM MODULE

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

240 mA

67108864 words

4,8

COMMON

1.8

1.8

4

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

64MX4

64M

0 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

200 MHz

Not Qualified

268435456 bit

e3

.008 Amp

4,8

.6 ns

K4X51163PE-LEC3T

Samsung

DDR1 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

115 mA

33554432 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B60

133 MHz

Not Qualified

536870912 bit

.000015 Amp

2,4,8,16

6 ns

K4T56083QF-GCCC0

Samsung

DDR2 DRAM

60

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

32MX8

32M

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

11 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

13 mm

.6 ns

K4H510838D-ZLB30

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

2.5

8

GRID ARRAY, THIN PROFILE

1 mm

70 Cel

64MX8

64M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

2

2.7 V

1.2 mm

10 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

e1

12 mm

.7 ns

K4H560838E-ZCCCT

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

310 mA

33554432 words

2,4,8

COMMON

2.6

2.6

8

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

BOTTOM

R-PBGA-B60

3

200 MHz

Not Qualified

268435456 bit

260

.004 Amp

2,4,8

.65 ns

K4T56083QF-ZCE60

Samsung

DDR2 DRAM

60

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

32MX8

32M

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

3

1.9 V

1.2 mm

11 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

e1

13 mm

.45 ns

K4T51043QG-HCE7

Samsung

DDR2 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

210 mA

134217728 words

4,8

COMMON

1.8

1.8

4

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

128MX4

128M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

400 MHz

Not Qualified

536870912 bit

e1

260

.008 Amp

4,8

.4 ns

K4X56163PI-LGC30

Samsung

DDR1 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

95 mA

16777216 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

133 MHz

Not Qualified

268435456 bit

e1

240

.00001 Amp

2,4,8,16

6 ns

K4T1G084QF-BCF80

Samsung

DDR2 DRAM

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

175 mA

134217728 words

4,8

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

3-STATE

128MX8

128M

BOTTOM

R-PBGA-B60

533 MHz

Not Qualified

1073741824 bit

260

4,8

.35 ns

K4T1G084QQ-HLE60

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

230 mA

134217728 words

4,8

YES

COMMON

1.8

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

128MX8

128M

0 Cel

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

333 MHz

9 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

4,8

11 mm

.45 ns

K4T1G084QE-HCF8T

Samsung

DDR2 DRAM

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

185 mA

134217728 words

4,8

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

3-STATE

128MX8

128M

BOTTOM

R-PBGA-B60

3

533 MHz

Not Qualified

1073741824 bit

260

4,8

.35 ns

K4C89183AF-GCG7

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

16777216 words

2,4

COMMON

1.8,2.5

18

GRID ARRAY

BGA60,6X15,40

DRAMs

1 mm

70 Cel

3-STATE

16MX18

16M

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B60

400 MHz

Not Qualified

301989888 bit

e0

2,4

.5 ns

K4H510838D-ZLB3

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

360 mA

67108864 words

2,4,8

COMMON

2.5

2.5

8

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

64MX8

64M

0 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

166 MHz

Not Qualified

536870912 bit

e3

.005 Amp

2,4,8

.7 ns

K4H561638F-GLA2

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

300 mA

16777216 words

2,4,8

COMMON

2.5

2.5

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B60

133 MHz

Not Qualified

268435456 bit

e0

.003 Amp

2,4,8

.75 ns

K4X56163PI-FEC60

Samsung

DDR1 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

110 mA

16777216 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

166 MHz

Not Qualified

268435456 bit

e1

260

.00001 Amp

2,4,8,16

5.5 ns

K4T1G044QQ-HLE60

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

225 mA

268435456 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

256MX4

256M

0 Cel

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

400 MHz

9 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

4,8

11 mm

.45 ns

K4H510838J-BCLB3

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

2.5

8

GRID ARRAY, THIN PROFILE

1 mm

70 Cel

64MX8

64M

0 Cel

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

9 mm

536870912 bit

2.3 V

AUTO/SELF REFRESH

12 mm

K4H561638F-GLB30

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

2.5

16

GRID ARRAY, THIN PROFILE

1 mm

70 Cel

16MX16

16M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

e0

14 mm

.7 ns

K4H511638G-HCB3

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

230 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

166 MHz

Not Qualified

536870912 bit

e1

260

.005 Amp

2,4,8

.7 ns

K4C89093AF-GCG7

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

33554432 words

2,4

COMMON

1.8,2.5

9

GRID ARRAY

BGA60,6X15,40

DRAMs

1 mm

70 Cel

3-STATE

32MX9

32M

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B60

400 MHz

Not Qualified

301989888 bit

e0

2,4

.5 ns

K4T1G044QQ-HCD60

Samsung

DDR2 DRAM

OTHER

60

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

268435456 words

YES

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

95 Cel

256MX4

256M

0 Cel

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

9 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

11 mm

.45 ns

K4H560838H-ZLB3T

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

280 mA

33554432 words

2,4,8

COMMON

2.5

2.5

8

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

166 MHz

Not Qualified

268435456 bit

e3

.003 Amp

2,4,8

K4T56083QF-ZCD5

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

255 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX8

32M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

3

1.9 V

1.2 mm

267 MHz

11 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

e1

260

.008 Amp

4,8

13 mm

.5 ns

K4H561638D-ZCCC0

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

2.6

16

GRID ARRAY, THIN PROFILE

1 mm

70 Cel

16MX16

16M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

2

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.5 V

AUTO/SELF REFRESH

e1

14 mm

.65 ns

K4T51043QG-HCCCT

Samsung

DDR2 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

175 mA

134217728 words

4,8

COMMON

1.8

1.8

4

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

128MX4

128M

0 Cel

BOTTOM

R-PBGA-B60

200 MHz

Not Qualified

536870912 bit

.008 Amp

4,8

.6 ns

K4X51163PC-FGC30

Samsung

DDR1 DRAM

OTHER

60

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

150 mA

33554432 words

2,4,8,16

YES

COMMON

1.8

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

3

1.95 V

1 mm

133 MHz

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e1

260

.0003 Amp

2,4,8,16

11.5 mm

6 ns

K4H510438B-GLB0

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

134217728 words

2,4,8

COMMON

2.5

2.5

4

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

128MX4

128M

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B60

133 MHz

Not Qualified

536870912 bit

e0

.005 Amp

2,4,8

.75 ns

K4H510438B-ZCA2

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

134217728 words

2,4,8

COMMON

2.5

2.5

4

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

128MX4

128M

0 Cel

BOTTOM

R-PBGA-B60

3

133 MHz

Not Qualified

536870912 bit

260

.005 Amp

2,4,8

.75 ns

K4T51083QC-ZCCC

Samsung

DDR2 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

67108864 words

4,8

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

64MX8

64M

-5 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

200 MHz

Not Qualified

536870912 bit

e1

260

.22 Amp

4,8

.6 ns

K4H560438J-HLCC0

Samsung

DDR1 DRAM

COMMERCIAL

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

270 mA

67108864 words

2,4,8

YES

COMMON

2.6

2.6

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

200 MHz

8 mm

Not Qualified

268435456 bit

2.5 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

2,4,8

14 mm

.65 ns

K4T1G044QC-ZLE60

Samsung

DDR2 DRAM

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

268435456 words

4,8

COMMON

1.8

1.8

4

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

3-STATE

256MX4

256M

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

333 MHz

Not Qualified

1073741824 bit

e1

4,8

.45 ns

K4H511638F-HCB3T

Samsung

DDR1 DRAM

COMMERCIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

380 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

166 MHz

Not Qualified

536870912 bit

e1

260

.005 Amp

2,4,8

.7 ns

K4T51043QM-GLD4

Samsung

DDR2 DRAM

COMMERCIAL

60

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

70 Cel

3-STATE

128MX4

128M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

1.9 V

1 mm

200 MHz

12.3 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e0

4,8

14.5 mm

.6 ns

K4H510438B-GCCC

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

430 mA

134217728 words

2,4,8

YES

COMMON

2.6

2.6

4

GRID ARRAY, THIN PROFILE

BGA60,9X12,40/32

DRAMs

1 mm

70 Cel

3-STATE

128MX4

128M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

200 MHz

10 mm

Not Qualified

536870912 bit

2.5 V

AUTO/SELF REFRESH

e0

.005 Amp

2,4,8

12 mm

.65 ns

K4H561638D-ZLB30

Samsung

DDR1 DRAM

COMMERCIAL

60

TBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

2.5

16

GRID ARRAY, THIN PROFILE

1 mm

70 Cel

16MX16

16M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

2

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

e1

14 mm

.7 ns

K4T51083QG-HCF7T

Samsung

DDR2 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

210 mA

67108864 words

4,8

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

64MX8

64M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

400 MHz

Not Qualified

536870912 bit

e1

260

.008 Amp

4,8

.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.