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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Length	Maximum Access Time
K4R271669A-NCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM416RD8C-RK80	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0	13.15 mm
KM418RD8C-RG60	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0	13.15 mm
KM418RD8C-RK80	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0	13.15 mm
K4R441869B-MCK7T	Samsung	RAMBUS DRAM	62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	150994944 bit			e0
K4R441869B-NCG6	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	53.3 ns
K4R441869B-MCG6	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	53.3 ns
KM416RD8AC-RK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM416RD8C-SK80	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0	13.15 mm
KM418RD8AD-RG60	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	53.3 ns
K4R271669B-MCK7T	Samsung	RAMBUS DRAM	62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	134217728 bit			e0
KM418RD8AD-SG60	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	262144 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0	12 mm	53.3 ns
K4R441869A-NCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM418RD8C-SM80	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0	13.15 mm
K4R441869A-MCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
K4R271669B-MCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
K4R271669A-MCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
K4R441869A-NCG6	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	53.3 ns
KM416RD8C-RM80	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0	13.15 mm
K4R271669B-MCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM418RD8C-SK80	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0	13.15 mm
KM416RD8AD-SK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	262144 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0	12 mm	45 ns
KM416RD8AC-RK70	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM416RD8C-SG60	Samsung	RAMBUS DRAM	62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0	13.15 mm
K4R271669A-NCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
K4R441869A-MCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM416RD8AC-SK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	262144 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0	12 mm	45 ns
K4R441869B-MCG6T	Samsung	RAMBUS DRAM	62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	150994944 bit			e0
KM418RD8AD-RK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	45 ns
KM416RD8AD-RG60	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0	12 mm	53.3 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.