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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM4216C255TF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT					23.49 mm	70 ns
KM4216C258R-6	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT					23.49 mm	60 ns
KM4216C258GF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT					26.03 mm	70 ns
KM4216C255G-80	Samsung	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm			256KX16	256K			DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V						26.03 mm	80 ns
K4H2G0638A-UCB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	536870912 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	512MX4	512M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	2147483648 bit				260	.03 Amp			.75 ns
KM4216V255RF-6	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT					23.49 mm	60 ns
KM4216V257RF-6	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT					23.49 mm	60 ns
KM4216C255TL-8	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT					23.49 mm	80 ns
KM4216C257RF-6	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT					23.49 mm	60 ns
KM4216C257TL-8	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT					23.49 mm	80 ns
KM4216C256RF-6	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT					23.49 mm	60 ns
MT6V16M16F2-4B	Micron Technology	RAMBUS DRAM		64	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY						16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64						Not Qualified	268435456 bit		ACTIVE REFRESH; SELF REFRESH	e1
MT42C256K16A1SG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	195 mA	262144 words				5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		.01 Amp		26.29 mm	80 ns
MT42C256K16C2SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	70 ns
MT42C256K16C1SG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	80 ns
MT43C256K8A1SG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5	5	8	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64			2.38 mm		12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	80 ns
MT42C256K16A1SG-6	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	220 mA	262144 words				5	5	16	SMALL OUTLINE	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0		.01 Amp			60 ns
MT43C256K8A1SG-6	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5	5	8	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64			2.38 mm		12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	60 ns
MT43C256K8A1SG-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		8	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64			2.38 mm		12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	60 ns
MT42C256K16C1SG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	70 ns
MT6V16M18F2-4B	Micron Technology	RAMBUS DRAM		64	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY						16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64						Not Qualified	301989888 bit		ACTIVE REFRESH; SELF REFRESH	e1
MT42C256K16C2SG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	80 ns
MT43C256K8A1SG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5	5	8	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64			2.38 mm		12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	70 ns
MT49V4M16V-400	Micron Technology	SYNCHRONOUS DRAM		64			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	L BEND	SYNCHRONOUS		4194304 words		YES		2.5		16	VERTICAL SURFACE MOUNT						4MX16	4M			SINGLE	1	R-PSVP-L64		2.625 V				Not Qualified	67108864 bit	2.375 V	AUTO REFRESH AND SELF REFRESH
MT42C256K16A1SG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	210 mA	262144 words				5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		.01 Amp		26.29 mm	70 ns
MT43C256K8A1SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		8	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64			2.38 mm		12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	70 ns
MT43C256K8A1SG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		8	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64			2.38 mm		12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	80 ns
MT42C256K16C1SG-6	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	60 ns
MT49V4M16H-400	Micron Technology	SYNCHRONOUS DRAM		64			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		16	SMALL OUTLINE			.4 mm			4MX16	4M			SINGLE	1	R-PSSO-G64		2.625 V	1.85 mm		10.185 mm	Not Qualified	67108864 bit	2.375 V	AUTO REFRESH AND SELF REFRESH					27 mm
EDE5104ABSE-5A-E	Micron Technology	DDR1 DRAM	COMMERCIAL	64	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA64,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM		R-PBGA-B64				267 MHz		Not Qualified	536870912 bit						4,8		.5 ns
MT42C256K16C1SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	70 ns
MT42C256K16A1SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	70 ns
EDE5104ABSE-4C-E	Micron Technology	DDR1 DRAM		64	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA64,9X15,32	DRAMs	.8 mm		3-STATE	128MX4	128M			BOTTOM		R-PBGA-B64				200 MHz		Not Qualified	536870912 bit						4,8		.6 ns
MT42C256K16C2SG-6	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	60 ns
MT42C256K16C2SG-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	60 ns
MT42C256K16C1SG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	80 ns
MT42C256K16C2SG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	80 ns
MT42C256K16C1SG-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	60 ns
MT42C256K16A1SG-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE				70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0					60 ns
SLD4M18DR400VS-400	Micron Technology	SLDRAM	COMMERCIAL	64		8192		PLASTIC/EPOXY				CMOS				4194304 words		YES	COMMON	2.5	2.5	18			DRAMs		70 Cel	3-STATE	4MX18	4M	0 Cel								200 MHz		Not Qualified	75497472 bit
MT42C256K16C2SG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					26.29 mm	70 ns
MT49V4M18H-400	Micron Technology	SYNCHRONOUS DRAM		64			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		18	SMALL OUTLINE			.4 mm			4MX18	4M			SINGLE	1	R-PSSO-G64		2.625 V	1.85 mm		10.185 mm	Not Qualified	75497472 bit	2.375 V	AUTO REFRESH AND SELF REFRESH					27 mm
EDE5108ABSE-4C-E	Micron Technology	DDR1 DRAM		64	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA64,9X15,32	DRAMs	.8 mm		3-STATE	64MX8	64M			BOTTOM		R-PBGA-B64				200 MHz		Not Qualified	536870912 bit						4,8		.6 ns
MT49V4M18V-400	Micron Technology	SYNCHRONOUS DRAM		64			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	L BEND	SYNCHRONOUS		4194304 words		YES		2.5		18	VERTICAL SURFACE MOUNT						4MX18	4M			SINGLE	1	R-PSVP-L64		2.625 V				Not Qualified	75497472 bit	2.375 V	AUTO REFRESH AND SELF REFRESH
EDE5108ABSE-5A-E	Micron Technology	DDR1 DRAM	COMMERCIAL	64	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA64,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B64				267 MHz		Not Qualified	536870912 bit						4,8		.5 ns
MT42C256K16A1SG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				26.29 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.