66 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4D551638D-TC40	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	410 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	250 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0			.07 Amp	2,4,8	22.22 mm	.6 ns
K4H560838D-TLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.7 ns
K4H511638F-LLCCT	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.65 ns
K4H1G0838M-TLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		430 mA	134217728 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel	TIN LEAD	DUAL		R-PDSO-G66				133 MHz		Not Qualified	1073741824 bit			e0			.006 Amp	2,4,8		.7 ns
K4H511638D-ULB3T	Samsung	CACHE DRAM MODULE	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H510838F-LLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	360 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			260	.005 Amp	2,4,8	22.22 mm	.7 ns
KM44L32031BT-GY0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX4	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
K4H560838F-TCCC0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	22.22 mm	.65 ns
K4H1G0638B-TCB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	450 mA	268435456 words		YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e0			.01 Amp		22.22 mm	.75 ns
K4D551638D-TC60	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	2.6	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0				2,4,8	22.22 mm	.7 ns
K4H280838B-TLA0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		310 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX8	16M	0 Cel		DUAL		R-PDSO-G66				100 MHz		Not Qualified	134217728 bit						.025 Amp	2,4,8		.8 ns
K4H560438E-TCB00	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	240 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.75 ns
K4H510438G-LLB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		175 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.75 ns
K4H510838C-ULCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			67108864 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.65 ns
K4C561638C-TCD4	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	325 mA	16777216 words	2,4	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.65 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4	22.22 mm	.65 ns
K4H561638N-LCCC0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e6		260	.003 Amp	2,4,8	22.22 mm	.65 ns
K4H510838G-LCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		220 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.7 ns
K4H560838E-ULB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	268435456 bit					260	.003 Amp	2,4,8		.75 ns
K4H561638D-TCB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			22.22 mm	.7 ns
K4C561638C-TCB	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	324 mA	16777216 words	2,4	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.65 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4	22.22 mm	.65 ns
K4H560838E-UCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	268435456 bit					260	.003 Amp	2,4,8		.7 ns
K4H560838D-TCA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H560438D-TCA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.75 ns
K4H560438D-TLA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX4	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			22.22 mm	.75 ns
K4H511638C-UCB3T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	380 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	2,4,8	22.22 mm	.7 ns
K4H280438E-TCB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX4	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
K4H561638F-TCA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	22.22 mm	.75 ns
K4H561638H-ULB0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	16777216 words	2,4,8		COMMON	2.3	2.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.75 ns
K4H510838B-TCC4	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.43 Amp	2,4,8	22.22 mm	.65 ns
KM48L32331AT-GZ0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		268435456 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
K4H510738E-TLA20	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H560838N-LLCCT	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	268435456 bit			e3		260	.003 Amp	2,4,8		.65 ns
K4H280438B-TCA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		350 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		DUAL		R-PDSO-G66				133 MHz		Not Qualified	134217728 bit						.03 Amp	2,4,8		.75 ns
K4H560438E-ULB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		260 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	268435456 bit					260	.003 Amp	2,4,8		.7 ns
K4H511638J-LCLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX16	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
K4H560838H-UCCCT	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		300 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	268435456 bit			e3			.004 Amp	2,4,8		.65 ns
MTV46V128M8P-75IT:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	485 mA	134217728 words	2,4,8	YES	COMMON	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns
EDD5108ABTA-75	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66				133 MHz		Not Qualified	536870912 bit			e0			.003 Amp	2,4,8		.75 ns
MTV46V64M16P-75IT:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	495 mA	67108864 words	2,4,8	YES	COMMON	2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns
MTV46V128M8P-6T:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	525 mA	134217728 words	2,4,8	YES	COMMON	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.7 ns
MTV46V256M4P-6T:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	525 mA	268435456 words	2,4,8	YES	COMMON	2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.7 ns
MTV46V64M16TG-5B:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	545 mA	67108864 words	2,4,8	YES	COMMON	2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	64MX16	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm		1073741824 bit	2.5 V	AUTO/SELF REFRESH				.015 Amp	2,4,8	22.22 mm	.7 ns
MTV46V64M16TG-6T:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	535 mA	67108864 words	2,4,8	YES	COMMON	2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	64MX16	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.7 ns
MTV46V128M8P-75:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	485 mA	134217728 words	2,4,8	YES	COMMON	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns
MTV46V64M16TG-75:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	495 mA	67108864 words	2,4,8	YES	COMMON	2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	64MX16	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns
MTV46V128M8TG-5B:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	530 mA	134217728 words	2,4,8	YES	COMMON	2.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm		1073741824 bit	2.5 V	AUTO/SELF REFRESH				.013 Amp	2,4,8	22.22 mm	.7 ns
MT2LSDT132AGP-6	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	66	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		290 mA	1048576 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIMM66(UNSPEC)	DRAMs		70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE		R-PSMA-N66				166 MHz		Not Qualified	33554432 bit						.004 Amp			5.5 ns
MTV46V256M4P-75:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	485 mA	268435456 words	2,4,8	YES	COMMON	2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.