72 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KMM53216000CK-50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			5		32	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		16MX32	16M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	31.88 mm	8.89 mm		536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; WD-MAX			107.95 mm	50 ns
M53230410DB0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	4194304 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		50 ns
KMM5368103AK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX36	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
KMM532512W-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		512KX32	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				100 ns
KMM5368105CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		8MX36	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				50 ns
KMM332V213AJ-L7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL	1	R-XDMA-N72	3.6 V	25.4 mm		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		70 ns
M53611601BE0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1200 mA	16777216 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX36	16M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.012 Amp		60 ns
KMM332F124BT-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N72	3.6 V	25.4 mm		Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0004 Amp		60 ns
M53640405BT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	330 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.003 Amp		50 ns
KMM5368003ASW-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		396 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel		SINGLE		R-PSMA-N72				Not Qualified	301989888 bit				.006 Amp		50 ns
KMM5322204BW/BWG-7	Samsung	EDO DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD			2097152 words			5		32	MICROELECTRONIC ASSEMBLY							2MX32	2M			SINGLE	1	R-XSMA-N72				Not Qualified	67108864 bit						70 ns
KMM5328000AV-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
KMM5362203WG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
KMM5364003CKG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel		DUAL	1	R-XDMA-N72	5.5 V			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.009 Amp		50 ns
KMM5328004BK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.016 Amp		50 ns
M53640805BY0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	306 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.006 Amp		60 ns
KMM332F410CS-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N72	3.6 V	25.4 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		.0016 Amp		60 ns
KMM5328000BSWG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	224 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp		60 ns
KMM53232004BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	33554432 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.016 Amp		60 ns
KMM5328100AKG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
KMM5324000AKVG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
KMM5321200W-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
KMM5361000C2-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
KMM332F124AT-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N72	3.6 V	25.4 mm		Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0004 Amp		60 ns
KMM540512CG-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	620 mA	524288 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX40	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	20971520 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.02 Amp		80 ns
KMM5322200W-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
KMM332V203AT-L7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	280 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL	1	R-XDMA-N72	3.6 V	25.4 mm		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		70 ns
KMM5328100CSG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				50 ns
KMM5364003ASWG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		390 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel		SINGLE		R-PSMA-N72				Not Qualified	150994944 bit				.003 Amp		50 ns
KMM332F224BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	322 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N72	3.6 V	25.4 mm	3.81 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.0008 Amp	59.68 mm	50 ns
KMM5404100AKG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX40	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	167772160 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
M53211600BJ0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	16777216 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.008 Amp		60 ns
M53230810DB0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	816 mA	8388608 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.016 Amp		60 ns
KMM5324004CKG-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N72	5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		50 ns
M53620812CW0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1008 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		8MX36	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	301989888 bit	4.5 V			.018 Amp		50 ns
KMM332V213BS-L5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		ZIG-ZAG	1	R-XZMA-N72	3.6 V	25.53 mm	2.54 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX		.0012 Amp	59.68 mm	50 ns
KMM5322000AVG-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	696 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	21.717 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.016 Amp		100 ns
M53213200CJ0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	33554432 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		SINGLE	2	R-XSMA-N72	5.5 V			Not Qualified	1073741824 bit	4.5 V			.016 Amp		60 ns
KMM5324000VG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD		720 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72		25.4 mm		Not Qualified	134217728 bit				.008 Amp		60 ns
KMM5401000BG-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	700 mA	1048576 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		Other Memory ICs	1.27 mm	70 Cel	3-STATE	1MX40	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.01 Amp		80 ns
KMM5328000BSW-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	244 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp		50 ns
KMM5324000BKG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		50 ns
KMM5322104CKUG-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL	1	R-XDMA-N72	5.5 V	25.4 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp		60 ns
KMM5404000AK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX40	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	167772160 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
KMM5321200BWG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	19.05 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp		60 ns
M53230810DW0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	8388608 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.016 Amp		50 ns
KMM5328104BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.016 Amp		60 ns
KMM5398100AKM-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		39	MICROELECTRONIC ASSEMBLY		19			70 Cel	3-STATE	8MX39	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	327155712 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.