74 DRAM 14

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
UPD488385FB-C60-53BF1	Renesas Electronics	RAMBUS DRAM	74	FBGA	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		570 mA	4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm	3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			600 MHz		Not Qualified	75497472 bit			e0	.006 Amp
UPD488385-C80-45BF1	Renesas Electronics	RAMBUS DRAM	74	BGA		PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs		3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0
UPD488385-C80-50BF1	Renesas Electronics	RAMBUS DRAM	74	BGA		PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs		3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0
UPD488385FB-C80-45BF1	Renesas Electronics	RAMBUS DRAM	74	FBGA	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		700 mA	4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm	3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			800 MHz		Not Qualified	75497472 bit			e0	.006 Amp
UPD488385-C60-45BF1	Renesas Electronics	RAMBUS DRAM	74	BGA		PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs		3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM					600 MHz		Not Qualified	75497472 bit			e0
UPD488385FB-C80-40BF1	Renesas Electronics	RAMBUS DRAM	74	FBGA	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		700 mA	4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm	3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			800 MHz		Not Qualified	75497472 bit			e0	.006 Amp
UPD488385-C60-53BF1	Renesas Electronics	RAMBUS DRAM	74	BGA		PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs		3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM					600 MHz		Not Qualified	75497472 bit			e0
UPD488385-C80-40BF1	Renesas Electronics	RAMBUS DRAM	74	BGA		PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs		3-STATE	4MX18	4M	Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0
KM418RD4C-K80	Samsung	RAMBUS DRAM	74	TFBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm		4MX18	4M		BOTTOM	1	R-PBGA-B74	2.63 V	1.2 mm		7.6 mm	Not Qualified	75497472 bit	2.37 V	SELF REFRESH			12.6 mm	45 ns
KM416RD4C-M80	Samsung	RAMBUS DRAM	74	TFBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm		4MX16	4M		BOTTOM	1	R-PBGA-B74	2.63 V	1.2 mm		7.6 mm	Not Qualified	67108864 bit	2.37 V	SELF REFRESH			12.6 mm
KM416RD4C-G60	Samsung	RAMBUS DRAM	74	TFBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm		4MX16	4M		BOTTOM	1	R-PBGA-B74	2.63 V	1.2 mm		7.6 mm	Not Qualified	67108864 bit	2.37 V	SELF REFRESH			12.6 mm
KM416RD4C-K80	Samsung	RAMBUS DRAM	74	TFBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm		4MX16	4M		BOTTOM	1	R-PBGA-B74	2.63 V	1.2 mm		7.6 mm	Not Qualified	67108864 bit	2.37 V	SELF REFRESH			12.6 mm
KM418RD4C-M80	Samsung	RAMBUS DRAM	74	TFBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm		4MX18	4M		BOTTOM	1	R-PBGA-B74	2.63 V	1.2 mm		7.6 mm	Not Qualified	75497472 bit	2.37 V	SELF REFRESH			12.6 mm	40 ns
KM418RD4C-G60	Samsung	RAMBUS DRAM	74	TFBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm		4MX18	4M		BOTTOM	1	R-PBGA-B74	2.63 V	1.2 mm		7.6 mm	Not Qualified	75497472 bit	2.37 V	SELF REFRESH			12.6 mm	53.3 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.