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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT60B2G8HB-48B:A	Micron Technology	DDR5 DRAM		82	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.1		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA82,11X13,32		.8 mm	95 Cel	3-STATE	2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B82			1 mm	2403.8 MHz	9 mm		17179869184 bit		SELF REFRESH						11 mm
MT41J512M8THU-15E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
K4B510846E-ZCF8	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				533 MHz		Not Qualified	536870912 bit							8		.265 ns
K4B510846E-ZCH9	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				667 MHz		Not Qualified	536870912 bit							8		.225 ns
M378B5673DZ1-H9	Samsung	DDR DRAM MODULE	OTHER	82	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX8	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
M378B2873DZ1-H9	Samsung	DDR DRAM MODULE	OTHER	82	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX8	128M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		3.18 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
M378B6474DZ1-H9	Samsung	DDR DRAM MODULE	OTHER	82	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		64MX8	64M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		3.18 mm	Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
K4B510846E-ZCG9	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				667 MHz		Not Qualified	536870912 bit							8		.225 ns
K4B510846E-ZCE7	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				400 MHz		Not Qualified	536870912 bit							8		.35 ns
K4B510846E-ZCG8	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				533 MHz		Not Qualified	536870912 bit							8		.265 ns
K4B510846E-ZCF7	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				400 MHz		Not Qualified	536870912 bit							8		.35 ns
K4B1G0846D-HCH90	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.255 ns
K4B1G0446D-HCH9	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.255 ns
K4B1G0446D-HCF70	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	11 mm	.4 ns
K4B1G0846D-HCF70	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	11 mm	.4 ns
K4B1G0446D-HCF7	Samsung	DDR3 DRAM		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B82				400 MHz		Not Qualified	1073741824 bit							8		.4 ns
K4B1G0846D-HCH9T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			667 MHz		Not Qualified	1073741824 bit			e1		260		8		.255 ns
K4B1G0446D-HCF7T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		MATTE TIN	BOTTOM		R-PBGA-B82	1			400 MHz		Not Qualified	1073741824 bit			e3				8		.4 ns
K4B1G0846D-HCF7T	Samsung	DDR3 DRAM		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B82				400 MHz		Not Qualified	1073741824 bit							8		.4 ns
K4B1G0846D-HCF8	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.3 ns
K4B1G0446D-HCF8T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			533 MHz		Not Qualified	1073741824 bit			e1		260		8		.3 ns
K4B1G0446D-HCF80	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.3 ns
K4B1G0846D-HCF8T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			533 MHz		Not Qualified	1073741824 bit			e1		260		8		.3 ns
K4B1G0446D-HCH90	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.255 ns
K4B1G0446D-HCF8	Samsung	DDR3 DRAM		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			533 MHz		Not Qualified	1073741824 bit			e1		260		8		.3 ns
K4B1G0846D-HCF80	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.3 ns
K4B1G0446D-HCH9T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			667 MHz		Not Qualified	1073741824 bit			e1		260		8		.255 ns
K4B1G0846D-HCH9	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.255 ns
K4B1G0846D-HCF7	Samsung	DDR3 DRAM		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B82				400 MHz		Not Qualified	1073741824 bit							8		.4 ns
MT41J512M14JE-15:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M4JE-25E:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M8THU-15:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J256M8JE-15IT:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M4JE-25E:B	Micron Technology	DDR3 DRAM	OTHER	82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M4JE-187EIT:B	Micron Technology	DDR3 DRAM	OTHER	82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M4JE-187EIT:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M14JE-107IT:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J256M8JE-107:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J256M8JE-15E:B	Micron Technology	DDR3 DRAM	OTHER	82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J1G4THU-187	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	1.87 ns
MT41J256M8JE-187IT:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M14JE-15EIT:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M8THU-25:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	415 mA	536870912 words		YES	COMMON	1.5	1.5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm	400 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.035 Amp		15 mm
MT41J1G4THU-187E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	360 mA	1073741824 words		YES	COMMON	1.5	1.5	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	1	1.575 V	1.35 mm	533 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp		15 mm
MT41J256M8JE-15EIT:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J512M4JE-187E:B	Micron Technology	DDR3 DRAM	OTHER	82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J256M8JE-15EIT:B	Micron Technology	DDR3 DRAM	OTHER	82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J256M8JE-25E:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.