84 DRAM 2,005

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4T1G164QF-BIE6T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84			333 MHz		Not Qualified	1073741824 bit				260	.01 Amp	4,8		.45 ns
MT4VR3218AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184					Not Qualified	603979776 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT4VR3216AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		16	MICROELECTRONIC ASSEMBLY						32MX16	32M			DUAL	1	R-XDMA-N184					Not Qualified	536870912 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6V16M16F2-3B	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY						16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84					Not Qualified	268435456 bit		SELF CONTAINED REFRESH	e1
SGG64M16U91AO8ZLL-187E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	533.33 MHz	8 mm		1073741824 bit	1.7 V				.07 Amp	4,8	12.5 mm	.35 ns
MT6V16M18F2-3M	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY						16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84					Not Qualified	301989888 bit		SELF CONTAINED REFRESH	e1
MT4VR3216AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		16	MICROELECTRONIC ASSEMBLY						32MX16	32M			DUAL	1	R-XDMA-N184					Not Qualified	536870912 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
SGG64M16U91AO8ZLL-37E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V				.045 Amp	4,8	12.5 mm	.5 ns
MT8VR6416AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		16	MICROELECTRONIC ASSEMBLY						64MX16	64M			DUAL	1	R-XDMA-N184					Not Qualified	1073741824 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12818AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184					Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12818AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184					Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12816AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		16	MICROELECTRONIC ASSEMBLY						128MX16	128M			DUAL	1	R-XDMA-N184					Not Qualified	2147483648 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4818AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184					Not Qualified	905969664 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12816AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		16	MICROELECTRONIC ASSEMBLY						128MX16	128M			DUAL	1	R-XDMA-N184					Not Qualified	2147483648 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6418AG-750B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184					Not Qualified	1207959552 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12818AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184					Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6418AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184					Not Qualified	1207959552 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4816AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184					Not Qualified	805306368 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4818AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184					Not Qualified	905969664 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT4VR3218AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184					Not Qualified	603979776 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6V16M16F2-4C	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY						16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84					Not Qualified	268435456 bit		SELF CONTAINED REFRESH	e1
SGG64M16U91AO8ZLL-25E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V				.06 Amp	4,8	12.5 mm	.4 ns
MT6VR4816AG-750B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184					Not Qualified	805306368 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
SGG64M16U91AO8ZLF-25E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V				.06 Amp	4,8	12.5 mm	.4 ns
MT6VR4816AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184					Not Qualified	805306368 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
SGG64M16U91AO8ZLF-37E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V				.045 Amp	4,8	12.5 mm	.5 ns
MT4VR3218AG-750B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184					Not Qualified	603979776 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4818AG-750B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184					Not Qualified	905969664 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6V16M18F2-3B	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY						16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84					Not Qualified	301989888 bit		SELF CONTAINED REFRESH	e1
MT4VR3216AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		16	MICROELECTRONIC ASSEMBLY						32MX16	32M			DUAL	1	R-XDMA-N184					Not Qualified	536870912 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT4VR3218AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184					Not Qualified	603979776 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4816AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184					Not Qualified	805306368 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6416AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		16	MICROELECTRONIC ASSEMBLY						64MX16	64M			DUAL	1	R-XDMA-N184					Not Qualified	1073741824 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6418AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184					Not Qualified	1207959552 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6418AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184					Not Qualified	1207959552 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6V16M18F2-4D	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY						16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84					Not Qualified	301989888 bit		SELF CONTAINED REFRESH	e1
MT8VR6416AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		16	MICROELECTRONIC ASSEMBLY						64MX16	64M			DUAL	1	R-XDMA-N184					Not Qualified	1073741824 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4816AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184					Not Qualified	805306368 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
SGG64M16U91AO8ZLF-3	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V				.055 Amp	4,8	12.5 mm	.45 ns
MT16VR12818AG-750B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184					Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12816AG-750B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		16	MICROELECTRONIC ASSEMBLY						128MX16	128M			DUAL	1	R-XDMA-N184					Not Qualified	2147483648 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4818AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184					Not Qualified	905969664 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
SGG64M16U91AO8ZLF-25	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V				.06 Amp	4,8	12.5 mm	.4 ns
MT8VR6418AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184					Not Qualified	1207959552 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT4VR3218AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184					Not Qualified	603979776 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4818AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184					Not Qualified	905969664 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6V16M18F2-4C	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY						16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84					Not Qualified	301989888 bit		SELF CONTAINED REFRESH	e1
SGG64M16U91AO8ZLL-25	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V				.06 Amp	4,8	12.5 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.