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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
MT8D88C132VH-6S	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	640 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.004 Amp	60 ns
MT16D88C232V-6	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	648 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	60 ns
MT16D88C232H-6	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	896 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	2MX32	2M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0032 Amp	60 ns
MT16D88C832-8S	Micron Technology	DRAM CARD	COMMERCIAL	88	2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	816 mA	8388608 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	8MX32	8M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	268435456 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	.0032 Amp	80 ns
MT12D88C140-6	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		1048576 words			5		40	MICROELECTRONIC ASSEMBLY		20		55 Cel	3-STATE	1MX40	1M	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	41943040 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT8D88C432H-8	Micron Technology	DRAM CARD	COMMERCIAL	88	2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	800 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	4MX32	4M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	134217728 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0016 Amp	80 ns
MT16D88C232-7S	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	816 mA	2097152 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.0032 Amp	70 ns
MT4D88C51232-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	88	512		PLASTIC/EPOXY		NO		CMOS			324 mA	524288 words	NO	COMMON	5	5	32		CARD88		DRAMs	55 Cel	3-STATE	512KX32	512K							Not Qualified	16777216 bit			.0008 Amp	80 ns
MT16D88C232H-7S	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	816 mA	2097152 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	2MX32	2M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	.0032 Amp	70 ns
MT8D88C132-8	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	720 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	1MX32	1M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	33554432 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0016 Amp	80 ns
MT16D88C232V-8	Micron Technology	DRAM CARD	COMMERCIAL	88	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	488 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	80 ns
MT16D88C832-6	Micron Technology	DRAM CARD	COMMERCIAL	88	2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	976 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	8MX32	8M	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	268435456 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0032 Amp	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.