90 DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

K4M51323PC-SG75T

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

16777216 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

BOTTOM

R-PBGA-B90

1

133 MHz

Not Qualified

536870912 bit

.0003 Amp

1,2,4,8

6 ns

K4M51323PC-SF1LT

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

16777216 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX32

16M

-25 Cel

BOTTOM

R-PBGA-B90

1

111 MHz

Not Qualified

536870912 bit

.0003 Amp

1,2,4,8

7 ns

K4M563233G-FN750

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

160 mA

8388608 words

1,2,4,8,FP

YES

COMMON

3

3/3.3

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1 mm

133 MHz

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

30

240

.001 Amp

1,2,4,8

13 mm

5.4 ns

K4M51323PC-SE1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

150 mA

16777216 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B90

1.95 V

1 mm

111 MHz

11 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e0

.0003 Amp

1,2,4,8

13 mm

7 ns

K4S643233F-DN75

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

135 mA

2097152 words

1,2,4,8,FP

YES

COMMON

3

3/3.3

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

2MX32

2M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

3.6 V

1.4 mm

133 MHz

11 mm

Not Qualified

67108864 bit

2.7 V

AUTO/SELF REFRESH

260

.0005 Amp

1,2,4,8

13 mm

5.4 ns

K4M51323LC-DL750

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

110 mA

16777216 words

1,2,4,8,FP

YES

COMMON

2.5

2.5

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX32

16M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1 mm

133 MHz

11 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

.001 Amp

1,2,4,8

13 mm

5.4 ns

K4S56323LF-HC1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2.5

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

13 mm

7 ns

K4M56323LE-EE80

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

300 mA

8388608 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

125 MHz

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

260

.0012 Amp

1,2,4,8

13 mm

6 ns

K4M56323LE-MN80

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

300 mA

8388608 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B90

2.7 V

1.4 mm

125 MHz

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

e0

.0012 Amp

1,2,4,8

13 mm

6 ns

K4S51323PF-MF750JR

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

1.8

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

16MX32

16M

-25 Cel

BOTTOM

1

R-PBGA-B90

1.95 V

1.4 mm

11 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

13 mm

6 ns

K4S56323LF-HE750

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2.5

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

13 mm

6 ns

K4M28323PH-HG90

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

95 mA

4194304 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX32

4M

-25 Cel

BOTTOM

R-PBGA-B90

111 MHz

Not Qualified

134217728 bit

.0003 Amp

1,2,4,8

7 ns

K4S563233F-FE1H0

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

3

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

13 mm

7 ns

K4M563233G-FL7L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

160 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

1

133 MHz

Not Qualified

268435456 bit

.001 Amp

1,2,4,8

5.4 ns

K4M56323LE-EE1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

2.7 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

260

13 mm

7 ns

K4S64323LH-HE75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

115 mA

2097152 words

1,2,4,8,FP

COMMON

1.8/2.5,2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

2MX32

2M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

67108864 bit

.0005 Amp

1,2,4,8

6 ns

K4S64323LH-HN1H

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

110 mA

2097152 words

1,2,4,8,FP

COMMON

1.8/2.5,2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

2MX32

2M

-25 Cel

BOTTOM

R-PBGA-B90

105 MHz

Not Qualified

67108864 bit

.0005 Amp

1,2,4,8

7 ns

K4M51323PI-HG600

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

16MX32

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

2

1.95 V

1 mm

8 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e1

13 mm

6 ns

K4S643233H-HF1H

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

120 mA

2097152 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX32

2M

-25 Cel

BOTTOM

R-PBGA-B90

105 MHz

Not Qualified

67108864 bit

.0005 Amp

1,2,4,8

7 ns

K4M56323PG-FE75T

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

140 mA

8388608 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

1

133 MHz

Not Qualified

268435456 bit

.0003 Amp

1,2,4,8

6 ns

K4S643233H-HC1L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

120 mA

2097152 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX32

2M

-25 Cel

BOTTOM

R-PBGA-B90

105 MHz

Not Qualified

67108864 bit

.0005 Amp

1,2,4,8

7 ns

K4M563233E-EC1H0

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

3

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

13 mm

7 ns

K4M51323PC-SG900

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

150 mA

16777216 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B90

1.95 V

1 mm

111 MHz

11 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e0

.0003 Amp

1,2,4,8

13 mm

7 ns

K4M51323PC-SG75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

16777216 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

BOTTOM

R-PBGA-B90

1

133 MHz

Not Qualified

536870912 bit

.0003 Amp

1,2,4,8

6 ns

K4M51323PC-SF1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

150 mA

16777216 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX32

16M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B90

1.95 V

1 mm

111 MHz

11 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e0

.0003 Amp

1,2,4,8

13 mm

7 ns

K4M56323PG-HC1L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

140 mA

8388608 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

MATTE TIN

BOTTOM

R-PBGA-B90

1

111 MHz

Not Qualified

268435456 bit

e3

.0003 Amp

1,2,4,8

7 ns

K4M56323PG-FE1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

140 mA

8388608 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

1.95 V

1 mm

111 MHz

8 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

30

240

.0003 Amp

1,2,4,8

13 mm

7 ns

K4M56323LE-ML1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

2.7 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

13 mm

7 ns

K4M563233G-FF75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

160 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

1

133 MHz

Not Qualified

268435456 bit

.001 Amp

1,2,4,8

5.4 ns

K4S563233F-HF75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

268435456 bit

.0005 Amp

1,2,4,8

6 ns

K4S64323LH-HN750

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2097152 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

2MX32

2M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

e1

13 mm

6 ns

K4S643233H-HF1H0

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2097152 words

YES

3

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

2MX32

2M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

3.6 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.7 V

AUTO/SELF REFRESH

13 mm

7 ns

K4M28323LH-FF7L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

120 mA

4194304 words

1,2,4,8,FP

COMMON

2.5

2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX32

4M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

134217728 bit

.0005 Amp

1,2,4,8

5.4 ns

K4M56323LE-EC800

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

2.7 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

260

13 mm

6 ns

K4M563233E-EL75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

320 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

268435456 bit

.0012 Amp

1,2,4,8

5.4 ns

K4M563233G-FF600

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

180 mA

8388608 words

1,2,4,8,FP

YES

COMMON

3

3/3.3

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1 mm

166 MHz

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

30

240

.001 Amp

1,2,4,8

13 mm

5.4 ns

K4X56323PN-8GC6000

Samsung

DDR1 DRAM

90

VFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

8MX32

8M

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

AUTO/SELF REFRESH

e1

13 mm

5.5 ns

K4X51323PC-8ECA0

Samsung

DDR1 DRAM

OTHER

90

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

135 mA

16777216 words

2,4,8,16

YES

COMMON

1.8

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

BOTTOM

1

R-PBGA-B90

1.95 V

1 mm

111 MHz

11 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0003 Amp

2,4,8,16

13 mm

6 ns

K4M283233H-HG7L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

120 mA

4194304 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX32

4M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

134217728 bit

.0005 Amp

1,2,4,8

7.5 ns

K4M513233C-DN7LT

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

16777216 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

536870912 bit

.001 Amp

1,2,4,8

5.4 ns

K4M563233G-FN75T

Samsung

SYNCHRONOUS DRAM

COMMERCIAL EXTENDED

90

VFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

160 mA

8388608 words

1,2,4,8,FP

YES

COMMON

3

3/3.3

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1 mm

133 MHz

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

.001 Amp

1,2,4,8

13 mm

5.4 ns

K4M56323LE-ER1H

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

290 mA

8388608 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

105 MHz

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

260

.0012 Amp

1,2,4,8

13 mm

7 ns

K4S563233F-HF1L0

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

3

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

8MX32

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

3.6 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

e1

13 mm

7 ns

K4S64323LH-HL600

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2097152 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

2MX32

2M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

13 mm

5.4 ns

K4S64323LF-DU15

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

80 mA

2097152 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

2MX32

2M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

66 MHz

11 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

260

.0005 Amp

1,2,4,8

13 mm

9 ns

K4M56323PG-FC1L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

140 mA

8388608 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

1

111 MHz

Not Qualified

268435456 bit

.0003 Amp

1,2,4,8

7 ns

K4M56323LG-HN60T

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

8388608 words

1,2,4,8,FP

COMMON

2.5

2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

MATTE TIN

BOTTOM

R-PBGA-B90

1

167 MHz

Not Qualified

268435456 bit

e3

.001 Amp

1,2,4,8

5.4 ns

K4S563233F-HG600

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

3

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

3.6 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

e1

13 mm

5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.