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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length	Maximum Access Time
K4R881869D-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	45 ns
K4R761869A-FCM8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	40 ns
K4T1G164QM-ZCD50	Samsung	DDR2 DRAM	OTHER	92	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		16	GRID ARRAY				95 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH	e1				21.7 mm	.5 ns
K4R881869E-GCT9	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		750 mA	16777216 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN SILVER COPPER	BOTTOM		R-PBGA-B92	3			1066 MHz		Not Qualified	301989888 bit			e1		260			32 ns
K4R571669D-FCN90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869A-FCN9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				18 mm	32 ns
K4R761869A-FCN10	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			32MX18	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869E-GCM80	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH	e1				15.1 mm
K4R881869D-FCN90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869E-FCT9	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		750 mA	16777216 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B92	1			1066 MHz		Not Qualified	301989888 bit								32 ns
K4R881869A-FCM90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					18 mm
K4R881869E-FCM8	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		580 mA	16777216 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B92	1			800 MHz		Not Qualified	301989888 bit								40 ns
K4R571669A-FCN9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	32 ns
K4R881869D-FCS9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4R571669A-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4R881869E-GCN10	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH	e1				15.1 mm
K4R571669M-NCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	10.5 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0				18 mm	45 ns
K4R761869A-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX18	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R761869A-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX18	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869A-FCN90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					18 mm
K4R571669D-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	45 ns
K4R881869D-FCT9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	32 ns
K4R881869D-FCM80	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869A-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				18 mm	45 ns
K4T1G164QM-ZCD5	Samsung	DDR2 DRAM	OTHER	92	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA92,9X21,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B92	3	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	4,8	21.7 mm	.5 ns
K4R881869M-NCK8	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF REFRESH	e0				17.5 mm	45 ns
K4R761869A-GCT9	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B92	3					Not Qualified	603979776 bit			e1		260			32 ns
K4R571669D-FCM8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	40 ns
K4R881869E-FCN10	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH		30	240		15.1 mm
K4R881869A-FCK80	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					18 mm
K4R881869M-NCK8T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				800 MHz		Not Qualified	301989888 bit			e0					45 ns
K4R881869A-FCS90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					18 mm
K4R521669A-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869E-GCM8T	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm	40 ns
K4R571669M-NCG6T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				600 MHz		Not Qualified	268435456 bit			e0					53.3 ns
K4R881869E-FCK80	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH		30	240		15.1 mm
K4R571669M-NCK8T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				800 MHz		Not Qualified	268435456 bit			e0					45 ns
K4R761869A-FCS9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4R761869A-GCM8	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B92	3					Not Qualified	603979776 bit			e1		260			40 ns
K4R521669A-FCS9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4R881869E-GCT90	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH	e1				15.1 mm
K4R571669D-FCN10	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH		30	240		15.1 mm
K4R881869D-FCT90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4T1G164QM-ZCCC0	Samsung	DDR2 DRAM	OTHER	92	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		16	GRID ARRAY				95 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH	e1				21.7 mm	.6 ns
K4R761869A-FCN1	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B92						Not Qualified	603979776 bit			e0					32 ns
K4R571669M-NCK7T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				711 MHz		Not Qualified	268435456 bit			e0					45 ns
K4R881869D-FCS90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869D-FCM8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	40 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.