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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length	Maximum Access Time
K4B1G0446C-ZCH9	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94	3			667 MHz		Not Qualified	1073741824 bit					260	8		.255 ns
K4B1G0846C-ZCF80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.3 ns
K4B1G0446C-ZCG8T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94				533 MHz		Not Qualified	1073741824 bit						8		.3 ns
K4B1G0846C-ZCF8	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B94	3			533 MHz		Not Qualified	1073741824 bit			e1		260	8		.3 ns
K4B1G0446C-ZCF7T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94				400 MHz		Not Qualified	1073741824 bit						8		.4 ns
K4B1G0446C-ZCG8	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94	3			533 MHz		Not Qualified	1073741824 bit					260	8		.3 ns
K4B1G0446C-ZCG90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.255 ns
K4B1G0846C-ZCG9	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94	3			667 MHz		Not Qualified	1073741824 bit					260	8		.255 ns
K4B1G0846C-ZCH9T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94				667 MHz		Not Qualified	1073741824 bit						8		.255 ns
K4B1G0446C-ZCG80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.3 ns
K4B1G0446C-ZCG9T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94				667 MHz		Not Qualified	1073741824 bit						8		.255 ns
K4B1G0446C-ZCG9	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M		MATTE TIN	BOTTOM		R-PBGA-B94	1			667 MHz		Not Qualified	1073741824 bit			e3			8		.255 ns
K4B1G0446C-ZCH9T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94				667 MHz		Not Qualified	1073741824 bit						8		.255 ns
K4B1G0446C-ZCF8T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94				533 MHz		Not Qualified	1073741824 bit						8		.3 ns
K4B1G0846C-ZCG80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.3 ns
K4B1G0846C-ZCG8	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94	3			533 MHz		Not Qualified	1073741824 bit					260	8		.3 ns
K4B1G0446C-ZCF70	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	400 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.4 ns
K4B1G0846C-ZCH9	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94	3			667 MHz		Not Qualified	1073741824 bit					260	8		.255 ns
K4B1G0846C-ZCF7T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94				400 MHz		Not Qualified	1073741824 bit						8		.4 ns
K4B1G0446C-ZCF80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.3 ns
K4B1G0446C-ZCH90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.255 ns
K4B1G0446C-ZCF7	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94	3			400 MHz		Not Qualified	1073741824 bit					260	8		.4 ns
K4B1G0846C-ZCH90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.255 ns
K4B1G0446C-ZCF8	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B94	3			533 MHz		Not Qualified	1073741824 bit					260	8		.3 ns
K4B1G0846C-ZCG9T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94				667 MHz		Not Qualified	1073741824 bit						8		.255 ns
K4B1G0846C-ZCF8T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94				533 MHz		Not Qualified	1073741824 bit						8		.3 ns
K4B1G0846C-ZCG90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.255 ns
K4B1G0846C-ZCG8T	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94				533 MHz		Not Qualified	1073741824 bit						8		.3 ns
K4B1G0846C-ZCF70	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	400 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.4 ns
K4B1G0846C-ZCF7	Samsung	DDR3 DRAM		94	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B94	3			400 MHz		Not Qualified	1073741824 bit					260	8		.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.