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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41J256M16HA-15EIT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J256M16HA-187EIT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K128M16HA-125E:D	Micron Technology	DDR3L DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			134217728 words	8		COMMON	1.35	1.35	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		0 Cel		BOTTOM		R-PBGA-B96			800 MHz		Not Qualified	2147483648 bit						.012 Amp	8
MT41J64M16LA-125E:B	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	460 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	800 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.01 Amp	8	15.5 mm	.1 ns
MT40A256M16LY-062EAIT:B	Micron Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT40A256M16GE-083E	Micron Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm			256MX16	256M				BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	14 mm
MT40A256M16LY-075EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	72 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH				.058 Amp	8	13.5 mm
MT41J64M16JT-107IT:G	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J64M16LA-125E:D	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41K128M16HA-125:D	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	425 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH				.012 Amp	8	14 mm
MT41J64M16LA-187:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT40A2G8KD-062EAAT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	189 mA	2147483648 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel	3-STATE	2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT41J128M16HA-187EIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J64M16JT-125EIT	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M				BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J64M16LA-25E:B	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.01 Amp	8	15.5 mm	.4 ns
MT41J128M16JT-107AAT:K	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J64M16JT-15IT	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M				BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J64M16LA-15EIT:B	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	420 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	15.5 mm	.125 ns
MT40A256M16GE-062EA:F	Micron Technology	DDR4 DRAM	COMMERCIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH				.046 Amp	8	14 mm
MT40A256M16GE-075EAUT:B	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	79 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.063 Amp	8	14 mm
MT41K64M16JT-15E:F	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm
MT41J64M16LA-15EAT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						15.5 mm
MT41J256M16RE-187EIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		10 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41K512M16VRN-107AAT:PTR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	304 mA	536870912 words		YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	934.57 MHz	8 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp		14 mm
MT41J64M16LA-25IT:B	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41K256M16HA-107G	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M				BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41J64M16JT-093IT:G	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J64M16JT-125G:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A4G4RC-062E:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	234 mA	4294967296 words	8	YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT41J64M16LA-125IT:B	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41J64M16LA-25:D	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41J128M16HA-107:D	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT40A256M16GE-083EAIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	50 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200 MHz	9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	14 mm
MT41J256M16HA-093:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J64M16JT-125AIT:G	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J64M16LA-187IT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41J64M16JT-125:J	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K512M16TNA-15EMIT:E	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	101 mA	536870912 words		YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	666.66 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A4G4RC-068:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	4294967296 words	8	YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT40A256M16LY-075EAAT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	54 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH				.044 Amp	8	13.5 mm
MT41K256M16RE-187EIT:D	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M				BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		10 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT40A1G16RC-068IT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	267 mA	1073741824 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	1GX16	1G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT41J128M16HA-187:D	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX16	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J256M16RE-107IT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		10 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41K512M16TNA-125MIT:E	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	104 mA	536870912 words		YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	800 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41J64M16LA-15:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT40A256M16GE-062EA:B	Micron Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH					8	14 mm
MT41J64M16LA-15:B	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	420 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.01 Amp	8	15.5 mm	.125 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.