ATSOP DRAM 19

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H1G0638B-TLAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		256MX4	256M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510638E-TCB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510738E-TCAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510638E-TCA20	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510738E-TCA20	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H1G0738B-TLAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX8	128M		DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		30	225			22.22 mm	.75 ns
K4H510738E-TLAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510738E-TLB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510638E-TLAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510638E-TLA20	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H1G0738B-TCAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX8	128M		DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		30	225			22.22 mm	.75 ns
K4S1G0732D-UC750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	ATSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	67108864 words	1,2,4,8	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE	SOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		DUAL	1	R-PDSO-G54		3.6 V	2.54 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		40	245	.004 Amp	1,2,4,8	22.22 mm	5.4 ns
K4H510638E-TCAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510638E-TLB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H1G0638B-TCAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		256MX4	256M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4S1G0732B-TC750	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	54	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		3.3		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.8 mm	70 Cel		128MX8	128M		DUAL	1	R-PDSO-G54		3.6 V	2.59 mm		10.16 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	225			22.22 mm	5.4 ns
K4S1G0632D-UC750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	ATSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	134217728 words	1,2,4,8	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE	SOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	TIN BISMUTH	DUAL	1	R-PDSO-G54	2	3.6 V	2.54 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e6			.004 Amp	1,2,4,8	22.22 mm	5.4 ns
K4H510738E-TCB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
K4H510738E-TLA20	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.