DIP DRAM 1,315

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TC514400AP-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				24.6 mm	70 ns
MCM6256BP12	Motorola	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS	72 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.19 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				19.05 mm	120 ns
D2164A-15	Intel	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC, GLASS-SEALED	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-GDIP-T16		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0				19.558 mm	150 ns
D2164A-20	Intel	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC, GLASS-SEALED	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-GDIP-T16		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0				19.558 mm	200 ns
KM41C256P-7	Samsung	FAST PAGE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	65 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.65 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				19.43 mm	70 ns
KM41C4000BSLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	70 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0001 Amp	22.02 mm	80 ns
KM44C256AP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	75 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	3	5.5 V	4.19 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	24.56 mm	80 ns
KM44C256BP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	24.56 mm	70 ns
KM44C256CP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	65 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	24.56 mm	70 ns
LH2464-10	Sharp Corporation	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.4 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				23 mm	100 ns
MB81C4256A-70P	Fujitsu	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS			THROUGH-HOLE		68 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0			.001 Amp		70 ns
MCM4116BC-20	Freescale Semiconductor	PAGE MODE DRAM	COMMERCIAL	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	MOS		-5 V	THROUGH-HOLE	ASYNCHRONOUS		16384 words			5		1	IN-LINE				70 Cel		16KX1	16K	0 Cel		DUAL	1	R-CDIP-T16		5.5 V				16384 bit	4.5 V	RAS ONLY REFRESH, ALSO REQUIRES VDD 12 V						200 ns
MCM4116BC20	Motorola	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words		SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	16384 bit			e0					200 ns
MCM514256AP70	Motorola	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.44 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp	24.64 mm	70 ns
MT1259-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0					120 ns
MT4264-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0					150 ns
TMM41256AP-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T16		5.5 V	5 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; LG-MAX	e0				19.9 mm	100 ns
TMM416D-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words		SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	16384 bit			e0					200 ns
TMM416P-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	MOS			THROUGH-HOLE	ASYNCHRONOUS		16384 words		SEPARATE	12	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		13.2 V	5 mm	7.62 mm	Not Qualified	16384 bit	10.8 V	RAS ONLY REFRESH	e0					250 ns
TMS4256-12NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL	1	R-PDIP-T16		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		19.305 mm	120 ns
TMX4C1024-15N	Texas Instruments	FAST PAGE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	150 ns
SMJ4C1024-15SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	150 ns
SMJ4416-15JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B		THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel		DUAL	1	R-CDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
5962-9062201MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V	3.93 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				22.86 mm	120 ns
SMJ4164-12JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B		THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL	1	R-CDIP-T16		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			120 ns
5962-9062203MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDIP-T18		5.5 V	4.44 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					23.085 mm	80 ns
5962-01-349-6975	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-PDIP-T16					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			100 ns
5962-01-263-9398	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16					Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ4C1024-10JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18		5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.606 mm	100 ns
SMJ44C251B-12JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-CDIP-T28		5.5 V	3.56 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						120 ns
SMJ44400-15JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS REFRESH						150 ns
TMS4060-1NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE		60 mA	4096 words		SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
5962-01-168-5239	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16					Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ44400-12JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V	3.556 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		120 ns
5962-9062202MVX	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T16		5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.32 mm	100 ns
TMS44C256-80N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	75 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	24.325 mm	80 ns
5962-8949704MXX	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-XDIP-T28		5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp		100 ns
TMS4030JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE		60 mA	4096 words		SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
TMS4C1025-15N	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS			THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDIP-T18					Not Qualified	1048576 bit								150 ns
5962-9061701MRX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	125 Cel		256KX4	256K	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20		5.5 V	3.93 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				25.4 mm	150 ns
5962-9061702MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-GDIP-T20		5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		120 ns
TMS44C256-15N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS			THROUGH-HOLE		55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL		R-PDIP-T20					Not Qualified	1048576 bit						.003 Amp		150 ns
M38510/24402BEA	Texas Instruments	PAGE MODE DRAM	MILITARY	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16					Not Qualified	65536 bit								150 ns
SMJ4464-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B		THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	1	R-CDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
TMS4C1027-12N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS			THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	120 ns
TMS4464-10NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	1	R-PDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.48 mm	100 ns
5962-01-240-9245	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words		SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16					Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
5962-01-407-9554	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL		R-XDIP-T16					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.