HBGA DRAM 33

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT47H64M16HR-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H128M8HQ-5EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H128M8HV-5ELIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			4,8	11.5 mm	.6 ns
MT47H256M4HV-5EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H256M4HV-5ELIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			4,8	11.5 mm	.6 ns
MT47H256M4HQ-5ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HR-5ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H256M4HV-5ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H256M4HV-5EAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H256M4HQ-5ELIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1		4,8	11.5 mm	.6 ns
MT47H128M8HV-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HW-5EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H256M4HQ-5EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H256M4HV-5ELIT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			4,8	11.5 mm	.6 ns
MT47H256M4HV-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HW-5EAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H128M8HQ-5ELIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1		4,8	11.5 mm	.6 ns
MT47H64M16HR-5EAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H128M8HV-5ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H128M8HV-5EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HR-5ELIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	.007 Amp	4,8	12.5 mm	.6 ns
MT47H256M4HQ-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H128M8HQ-5ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HW-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H128M8HQ-5EAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H128M8HQ-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HR-5EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H256M4HQ-5EAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns
MT47H64M16HW-5ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				12.5 mm	.6 ns
MT47H128M8HV-5ELIT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			4,8	11.5 mm	.6 ns
MT47H64M16HW-5ELIT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		.007 Amp	4,8	12.5 mm	.6 ns
MT47H64M16HW-5ELIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		.007 Amp	4,8	12.5 mm	.6 ns
MT47H128M8HV-5EAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY			.8 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				11.5 mm	.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.