LQFP DRAM 52

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41LC256K32D4LG-12	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	84 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	12.5 ns
HYB39S16320TQ-7	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	5.5 ns
HYB39S16320TQ-8	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	125 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	6 ns
HYB39S16320TQ-6	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	5.5 ns
TC59G1631AFB-80	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	7.5 ns
TC59G1631AFB-10	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	8 ns
TC59W6431FB-60	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		2.7 V	1.27 mm		14 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH				20 mm	.8 ns
TC59G1632AFB-80	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100	1	3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	7.5 ns
TC59G1632AFB-10	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	8 ns
TC59W6431FB-50	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		2.7 V	1.27 mm		14 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH				20 mm	.7 ns
TC59G1632AFB-12	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	9 ns
TC59W6431FB-40	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		2.7 V	1.27 mm		14 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH				20 mm	.6 ns
TC59G1631AFB-12	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	9 ns
KM4132G271A-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.4 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH				20 mm	7 ns
KM4132G271A-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.4 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH				20 mm	7 ns
KM4132G271A-12	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.4 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH				20 mm	9 ns
MT45V512K32RG-6	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH				20 mm
MT45V512K32LG-6	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH				20 mm
MT45V512K32RG-65	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH				20 mm
MT45V512K32LG-7	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO REFRESH AND SELF REFRESH				20 mm
MT45V512K32LG-65	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH				20 mm
MT46V2M32RG-6	Micron Technology	SYNCHRONOUS DRAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			2MX32	2M		TIN LEAD	QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			20 mm
MT41LC256K32D4LG-7S	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	143 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	6 ns
MT46V2M32LG-6	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	2097152 words	2,4,8,FP	YES	COMMON	2.65	2.7	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.75 V	1.6 mm	166 MHz	14 mm	Not Qualified	67108864 bit	2.55 V	AUTO/SELF REFRESH	e0	.003 Amp	2,4,8	20 mm	.75 ns
MT41LC256K32D4LG-17	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	2 BANK PAGE RANDOM AND BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words				3.3		32	FLATPACK, LOW PROFILE			.65 mm		3-STATE	256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH; BYTE ACCESS AND BLOCK/NON-PERSISTENT MASKED WRITE				20 mm	17.5 ns
MT41LC256K32D4LG-7	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	143 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH	e0	.002 Amp	1,2,4,8	20 mm	6 ns
MT46V4M32V1LG-5	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		4MX32	4M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			20 mm	.7 ns
MT41LC256K32D4LG-8S	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	6.5 ns
MT46V2M32V1LG-6	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	67108864 bit	2.4 V	AUTO/SELF REFRESH	e0	.003 Amp	2,4,8	20 mm	.75 ns
MT41LC256K32D4LG-15STR	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words				3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH	e0			20 mm
MT46V2M32LG-65	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	285 mA	2097152 words	2,4,8,FP	YES	COMMON	2.65	2.7	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.75 V	1.6 mm	153 MHz	14 mm	Not Qualified	67108864 bit	2.55 V	AUTO/SELF REFRESH	e0	.003 Amp	2,4,8	20 mm	.75 ns
MT41LC256K32D4LG-10TR	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	9 ns
MT41LC256K32D4LG-10STR	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	9 ns
MT46V2M32RG-65	Micron Technology	SYNCHRONOUS DRAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			2MX32	2M		TIN LEAD	QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			20 mm
MT41LC256K32D4LG-8	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH	e0	.002 Amp	1,2,4,8	20 mm	6.5 ns
MT41LC256K32D4LG-12TR	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	12.5 ns
MT46V2M32V1LG-5	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	345 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	67108864 bit	2.4 V	AUTO/SELF REFRESH	e0	.003 Amp	2,4,8	20 mm	.75 ns
MT46V2M32V1LG-55	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	320 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.6 V	1.6 mm	182 MHz	14 mm	Not Qualified	67108864 bit	2.4 V	AUTO/SELF REFRESH	e0	.003 Amp	2,4,8	20 mm	.75 ns
MT41LC256K32D4LG-15S	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH	e0	.002 Amp	1,2,4,8	20 mm	13 ns
MT41LC256K32D4LG-12STR	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words				3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH	e0			20 mm
MT41LC256K32D4LG-10S	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	9 ns
MT46V4M32LG-45	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.6 mm	222 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0		2,4,8	20 mm	.7 ns
MT46V4M32LG-5	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0		2,4,8	20 mm	.7 ns
MT41LC256K32D4LG-12S	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	84 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH	e0	.002 Amp	1,2,4,8	20 mm	11 ns
MT41LC256K32D4LG-17TR	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	2 BANK PAGE RANDOM AND BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words				3.3		32	FLATPACK, LOW PROFILE			.65 mm		3-STATE	256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH; BYTE ACCESS AND BLOCK/NON-PERSISTENT MASKED WRITE				20 mm	17.5 ns
MT41LC256K32D4LG-10	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	20 mm	9 ns
MT41LC256K32D4LG-15TR	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			20 mm	15 ns
MT46V2M32LG-5	Micron Technology	DDR1 DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	345 mA	2097152 words	2,4,8,FP	YES	COMMON	2.65	2.7	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		2.75 V	1.6 mm	200 MHz	14 mm	Not Qualified	67108864 bit	2.55 V	AUTO/SELF REFRESH		.003 Amp	2,4,8	20 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.