PGA DRAM 18

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

SMJ55166-80GB

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

3.62 mm

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

24.38 mm

80 ns

SMJ55161-75GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

MOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

75 ns

5962-9454901MXA

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

MIL-STD-883

PIN/PEG

ASYNCHRONOUS

195 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

80 ns

SMJ55161-80GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

MOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

200 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

80 ns

SMJ55161-70GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

70 ns

5962-9564303QXC

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

125 Cel

256KX16

256K

-55 Cel

GOLD

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

e4

75 ns

5962-9454903QXA

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

MIL-PRF-38535 Class Q

PIN/PEG

ASYNCHRONOUS

210 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

75 ns

5962-9564301QXA

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

MIL-PRF-38535 Class Q

PIN/PEG

ASYNCHRONOUS

200 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

80 ns

5962-9454901MXX

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

125 Cel

256KX16

256K

-55 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

e0

80 ns

SMJ55166-70GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

70 ns

5962-9564303QXA

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

MIL-PRF-38535 Class Q

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

75 ns

SMJ55166-80GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

200 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

80 ns

5962-9564301QXX

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

125 Cel

256KX16

256K

-55 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

e0

80 ns

SMJ55166-75GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

MOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

2.23 mm

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

75 ns

SMJ55166-70GB

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

70 ns

SMJ55166-75GB

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

3.62 mm

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

24.38 mm

75 ns

5962-9454903QXX

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

MIL-PRF-38535 Class Q

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

125 Cel

256KX16

256K

-55 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

e0

75 ns

5962-9564303QXX

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

PIN/PEG

ASYNCHRONOUS

262144 words

5

16

GRID ARRAY

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.