QCCJ DRAM 155

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM41257AJ-12	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		75 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			120 ns
KM41257AJ-15	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			150 ns
KM41C1000CG-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	1048576 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J18		5.5 V	3.556 mm	7.366 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	12.446 mm	80 ns
KM41C1000CG-6	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	1048576 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J18		5.5 V	3.556 mm	7.366 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	12.446 mm	60 ns
KM41256AJ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		75 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			120 ns
KM41C256J-10	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	45 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		12.445 mm	100 ns
KM41C256J-6	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			60 ns
KM41C257J-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS	55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		12.445 mm	80 ns
KM41C464J-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	12.445 mm	70 ns
KM41C466J-10	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	45 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		12.445 mm	100 ns
KM41257AJ-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		85 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KM41256-10PJ	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KM41C466J-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		12.445 mm	70 ns
KM41464AJ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		75 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			120 ns
KM41C258J-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	12.445 mm	80 ns
KM41464AJ-15	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			150 ns
KM41C256J-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		12.445 mm	70 ns
KM41464AJ-10	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KM41256AJ-10	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		85 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KM41C464J-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	12.445 mm	80 ns
KM41C466J-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		12.445 mm	80 ns
KM41256AJ-15	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			150 ns
KM41C1000CLG-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	1048576 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J18		5.5 V	3.556 mm	7.366 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	12.446 mm	80 ns
KM41C1000CSLG-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	QCCJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	1048576 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J18		5.5 V	3.556 mm	7.366 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	12.446 mm	80 ns
KM41C258J-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD	1	R-PQCC-J18		5.5 V	3.56 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	12.445 mm	70 ns
MT43C8128AEJ-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	70 ns
MT43C8129EJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	200 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	19.1262 mm	100 ns
MT43C8129AEJ-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	70 ns
MT1259EJ-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			100 ns
MT43C8128EJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	200 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	19.1262 mm	100 ns
MT43C8128AEJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	80 ns
MT1259EJ-8XT	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			80 ns
MT43C8129EJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	80 ns
MT43C8129AEJ-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	60 ns
MT1259EJ-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			80 ns
MT43C8128AEJ-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	60 ns
MT43C8129AEJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	165 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0	.002 Amp	19.1262 mm	80 ns
MT1259EJ-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			120 ns
MT43C8128EJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	100 ns
MT43C8129EJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	100 ns
MT43C8129AEJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	80 ns
MT43C8128EJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	220 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	19.1262 mm	80 ns
MT43C8128EJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	80 ns
MT1259EJ-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			200 ns
MT1259EJ-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		45 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			150 ns
MT43C8128AEJ-6	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	210 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0	.002 Amp	19.1262 mm	60 ns
MT43C8128AEJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	165 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0	.002 Amp	19.1262 mm	80 ns
MT43C8129AEJ-6	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	210 mA	131072 words		5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0	.002 Amp	19.1262 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.