SIP DRAM 11

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Self Refresh	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Length	Maximum Access Time
TC59R0409	Toshiba	RAMBUS DRAM		32	SIP	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	524288 words		5	9	IN-LINE	.65 mm			512KX9	512K		SINGLE	1	R-PSIP-T32	5.5 V	11.5 mm	1.2 mm	Not Qualified	4718592 bit	4.5 V		25 mm
TC59R1609VK	Toshiba	RAMBUS DRAM		32	SIP	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	2097152 words	YES	5	9	IN-LINE	.65 mm		3-STATE	2MX9	2M		SINGLE	1	R-PSIP-T32		11.7 mm	1.2 mm	Not Qualified	18874368 bit		SELF CONTAINED REFRESH; RAMBUS SIGNALING LOGIC INTERFACE	24.13 mm
TC59R0409SVP	Toshiba	RAMBUS DRAM	OTHER	32	SIP	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	524288 words	YES	5	9	IN-LINE	.65 mm	100 Cel	3-STATE	512KX9	512K	0 Cel	SINGLE	1	R-PSIP-T32	5.5 V	11.5 mm	1.2 mm	Not Qualified	4718592 bit	4.5 V	SELF CONTAINED REFRESH; RAMBUS SIGNALING LOGIC INTERFACE; OPTEMP SPECIFIED AS TJ	25 mm
HM51256LZP-12	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		120 ns
HM51256LZP-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		100 ns
HM51256LZP-8	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		85 ns
HM51256ZP-15	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		150 ns
HM51256ZP-8	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		85 ns
HM51256ZP-12	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		120 ns
HM51256ZP-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		100 ns
HM51256LZP-15	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	262144 words		5	1	IN-LINE		70 Cel		256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.