SOJ DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

UPD4218160LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD42S4260ALLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.00008 Amp

80 ns

UPD42S17170LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0001 Amp

60 ns

UPD424900ALE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

524288 words

NO

COMMON

5

5

9

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4718592 bit

e0

.0003 Amp

80 ns

UPD4265400LE-A50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

67108864 bit

e0

.0005 Amp

50 ns

UPD4216412LE-80

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

4194304 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24/28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

80 ns

UPD424402LB-80L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD42S17400LA-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.00025 Amp

80 ns

UPD424440LLE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

UPD42S17405LLA-A70

Renesas Electronics

EDO DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.00015 Amp

70 ns

UPD424190LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4718592 bit

e0

.001 Amp

70 ns

UPD421805LE-25

Renesas Electronics

EDO DRAM

COMMERCIAL

28

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

131072 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

UPD4264800LE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

115 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

67108864 bit

e0

.0005 Amp

60 ns

UPD42S17100LA-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

16777216 words

YES

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.0004 Amp

60 ns

UPD4216165LE-60

Renesas Electronics

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

UPD42S16160LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.00025 Amp

70 ns

UPD42S18180LLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

1048576 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

18874368 bit

e0

.0001 Amp

80 ns

UPD42S17800LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.00015 Amp

60 ns

UPD4265800LG-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

8388608 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J34

Not Qualified

67108864 bit

e0

60 ns

UPD42S17160LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0001 Amp

60 ns

UPD4264800LG-A50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J34

Not Qualified

67108864 bit

e0

50 ns

UPD424210LE-60-G

Renesas Electronics

EDO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD4218180LLE-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

1048576 words

NO

COMMON

3.3

3.3

18

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

18874368 bit

e0

.0004 Amp

70 ns

UPD42S4260LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

140 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD42S16400LA-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.00025 Amp

70 ns

UPD4216400LA-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

80 ns

UPD424101LA-70

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD42S17805LE-50

Renesas Electronics

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

2097152 words

YES

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.00025 Amp

50 ns

UPD424800LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

105 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD424412LA-60L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD42S16400LLA-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.00015 Amp

60 ns

UPD4218180LLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

1048576 words

NO

COMMON

3.3

3.3

18

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

18874368 bit

e0

.0004 Amp

80 ns

UPD421001LA-60

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

60 ns

UPD424100LA-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD4216180LE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

NO

COMMON

5

5

18

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

18874368 bit

e0

.0004 Amp

80 ns

UPD421805LE-30

Renesas Electronics

EDO DRAM

COMMERCIAL

28

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

131072 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

UPD424410LA-70L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

UPD42S17160LE-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0001 Amp

60 ns

UPD42S4440LLE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

4194304 bit

e0

.0001 Amp

80 ns

UPD42S17400LE-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.0004 Amp

60 ns

UPD42S16165LLE-A50

Renesas Electronics

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.00015 Amp

50 ns

UPD424412LB-70

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

K4E640412B-JC500

Samsung

EDO DRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

16MX4

16M

0 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.96 mm

50 ns

KM41V4000CLLJ-7

Samsung

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

55 mA

4194304 words

YES

SEPARATE

3.3

3.3

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J20

3.6 V

3.68 mm

7.62 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

e0

.0001 Amp

17.145 mm

70 ns

KM416C256D-J5

Samsung

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

110 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

26.04 mm

50 ns

KM44C4000C-LK-6

Samsung

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

17.15 mm

60 ns

KM48V8000J-6

Samsung

FAST PAGE DRAM

COMMERCIAL

34

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

110 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J34

3.6 V

3.76 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

22.23 mm

60 ns

KM416C1204AJ-L7

Samsung

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

150 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

e0

.0003 Amp

27.31 mm

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.