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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
SMJ4C1024-80HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	80 ns
SMJ4C1024-10HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	100 ns
SMJ44C256-80HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	80 ns
SMJ4C1024-15HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	150 ns
SMJ416100-70FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.685 mm	70 ns
SMJ4C1024-12FQ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ4C1024-80HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	80 ns
SMJ44400-12HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ4C1024-10HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	100 ns
SMJ416100-60FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	60 ns
SMJ416100-80FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	70 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	19.685 mm	80 ns
SMJ416400-70FNCMT	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH					19.685 mm	70 ns
SMJ4C1024-10HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	100 ns
SMJ44100-10HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	75 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.4	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.337 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.78 mm	100 ns
SMJ44400-15HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.31 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS REFRESH					17.78 mm	150 ns
SMJ44C251B-10HMM	Texas Instruments	VIDEO DRAM	MILITARY	28	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	110 mA	262144 words			5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-N28	5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.288 mm	100 ns
SMJ44400-12HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	120 ns
SMJ417100-70FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	70 ns
SMJ4C1024-80HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	80 ns
SMJ44100-10HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	80 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	100 ns
5962-9061701MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel	TIN LEAD	DUAL	1	R-CDSO-N20	5.5 V	1.93 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.145 mm	150 ns
SMJ44400-80HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel	TIN LEAD	DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0			.004 Amp	17.145 mm	80 ns
5962-9062203MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDSO-N20	5.5 V	1.93 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.145 mm	80 ns
SMJ44400-10HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	75 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.337 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.78 mm	100 ns
SMJ44C256-10FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	NO LEAD	SYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	100 ns
5962-9062201MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	1.93 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ4C1024-10FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	100 ns
SMJ4C1024-15HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	150 ns
SMJ44C256-80FQMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	80 ns
5962-9062201MUA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDSO-N20	5.5 V	1.93 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.145 mm	120 ns
SMJ4C1024-12HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	120 ns
5962-9062202MUA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDSO-N20	5.5 V	1.93 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.145 mm	100 ns
SMJ44C256-12FQMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	120 ns
SMJ44400-80HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.337 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.78 mm	80 ns
SMJ417400-60FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	60 ns
SMJ44C256-10HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	NO LEAD	SYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	100 ns
SMJ416400-80FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	19.685 mm	80 ns
SMJ417100-60FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	60 ns
SMJ4C1024-80FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	80 ns
SMJ4C1024-15FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	150 ns
SMJ416400-80FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.685 mm	80 ns
SMJ44400-12HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.337 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.78 mm	120 ns
5962-9062201MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDSO-N20	5.5 V	4.26 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.775 mm	120 ns
SMJ4C1024-10FQ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	100 ns
SMJ416100-80FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.685 mm	80 ns
SMJ4C1024-12HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ4C1024-10FQMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	100 ns
SMJ44C251B-12HML	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-CDSO-N28	5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.288 mm	120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.