SSOP DRAM 267

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H1G0738C-UCB0T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	1073741824 bit			e3			.01 Amp			.75 ns
K4H1G0738C-ULA20	Samsung	DDR1 DRAM	COMMERCIAL	66	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	370 mA	134217728 words		YES	COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	2.59 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp		22.22 mm	.75 ns
KM4216V256GL-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	60 ns
KM4216C256-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	2.4 mm		11.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN; 512 X 16 SAM PORT						26.3 mm	70 ns
KM4216V258GL-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	60 ns
KM4216V256G-60	Samsung	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm			256KX16	256K			DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V							26.03 mm	60 ns
M464S1724KLS-CL7A	Samsung	DDR DRAM MODULE	COMMERCIAL	54	SSOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH
KM4216C255GL-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns
KM4216C255GL-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	60 ns
KM4216C257G-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns
K4H1G0638B-ULB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	268435456 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
KM4216C255GF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns
K4H510638E-TCA2	Samsung	DDR DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	134217728 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN LEAD	DUAL		R-PDSO-G66				133 MHz		Not Qualified	536870912 bit			e0			.006 Amp			.75 ns
KM4216V257GL-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns
KM4216C257GF-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	80 ns
K4H510738E-TCA2	Samsung	DDR DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	67108864 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN LEAD	DUAL		R-PDSO-G66				133 MHz		Not Qualified	536870912 bit			e0			.006 Amp			.75 ns
KM4216V255GF-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	80 ns
K4H2G0638A-UCA2	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	536870912 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	512MX4	512M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	2147483648 bit			e3			.03 Amp			.75 ns
KM4216V255G-80	Samsung	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm			256KX16	256K			DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V							26.03 mm	80 ns
KM4216C256G-70	Samsung	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm			256KX16	256K			DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V							26.03 mm	70 ns
K4H2G0638A-UCCCT	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		430 mA	536870912 words			COMMON	2.6	2.6	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	512MX4	512M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	2147483648 bit			e3			.03 Amp			.65 ns
K4H1G0638B-UCB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	268435456 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
KM4216C258GF-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	80 ns
K4H1G0638C-ULA20	Samsung	DDR1 DRAM	COMMERCIAL	66	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	370 mA	268435456 words		YES	COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	2.59 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp		22.22 mm	.75 ns
KM4216V258G-60	Samsung	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm			256KX16	256K			DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V							26.03 mm	60 ns
KM4216C255G-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	262144 words				5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			.01 Amp		26.03 mm	80 ns
KM4216V255G-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	262144 words				3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			.01 Amp		26.03 mm	60 ns
KM4216C256GL-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	80 ns
K4H1G0738B-UCB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
K4H1G0738B-TCB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	134217728 words		YES	COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	2.59 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			240	.01 Amp		22.22 mm	.75 ns
KM4216C258GL-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						26.03 mm	60 ns
K4H1G0738B-UCA2T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
K4H1G0638B-TCB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	268435456 words		YES	COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	3	2.7 V	2.59 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e0		240	.01 Amp		22.22 mm	.75 ns
K4H1G0738B-UCB0T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
K4S510732E-TC750	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	54	SSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		3.3		4	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	2.54 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		30	225			22.22 mm	5.4 ns
K4H1G0738B-TCA2T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					240	.01 Amp			.75 ns
K4H1G0738B-ULB0T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
K4H1G0738B-UCB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	134217728 words		YES	COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	2.59 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			260	.01 Amp		22.22 mm	.75 ns
K4H1G0738C-ULB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	1073741824 bit			e3			.01 Amp			.75 ns
K4H1G0638B-ULB00	Samsung	DDR DRAM MODULE	COMMERCIAL	66	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	268435456 words		YES	COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	2.59 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			260	.01 Amp		22.22 mm	.75 ns
K4H1G0638B-UCB0T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	268435456 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
K4S1G0632D-UC75T	Samsung	CACHE DRAM MODULE	COMMERCIAL	54	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	268435456 words	1,2,4,8	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, SHRINK PITCH	SOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256MX4	256M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	1	3.6 V	2.54 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e3			.004 Amp	1,2,4,8	22.22 mm	5.4 ns
KM4216C256G-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	262144 words				5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			.01 Amp		26.03 mm	60 ns
KM4216V255G-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	125 mA	262144 words				3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			.01 Amp		26.03 mm	70 ns
K4H2G0638A-UCA2T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	536870912 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	512MX4	512M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	2147483648 bit			e3			.03 Amp			.75 ns
K4H1G0738C-ULA2	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	1073741824 bit			e3			.01 Amp			.75 ns
K4H1G0638C-UCB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	268435456 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
KM4216C258GF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.