TFBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT42L64M32D1MG-3IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			64MX32	64M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
PRN1G8Z21CDFSA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm		8589934592 bit							4,8	11 mm
MT61K256M32JE-13:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.75 mm	95 Cel		256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180	1.3905 V	1.2 mm		12 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT42L192M64D3EV-18WT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.5 mm			192MX64	192M			BOTTOM	1	S-PBGA-B253	1.95 V	1.2 mm		11 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11 mm	10 ns
SGG512M8V91AG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
PRN1024M4V91AG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
PRN1024M4V91AG8RGF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
MT42L128M32D4MG-18IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX32	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L64M64D2MG-18AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			64MX64	64M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L128M64D2MG-18AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX64	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L128M32D4MG-25IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX32	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
EDE2104AASE-8G-E	Micron Technology	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm			512MX4	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.12 mm		10.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					20.7 mm
SGG256M4U91AO8CCL-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	10 mm	.4 ns
MT42L96M64D3MG-3AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4.7 mA	100663296 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			96MX64	96M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm	10 ns
SGG64M16U91AO8ZLL-3	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	67108864 words	4,8	YES	COMMON	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V					.055 Amp	4,8	12.5 mm	.45 ns
EDJ4216BASE-GN-F	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9.3 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					13.5 mm	.225 ns
MT42L192M64D3EV-3AIT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA253,17X17,20	.5 mm	85 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B253	1.3 V	1.2 mm	333 MHz	11 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11 mm
EDJ4216EFBG-DJ-F	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX16	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1					13.5 mm
EDJ1108DJBG-JS-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934 MHz	7.5 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH					8	11 mm
EDJ1108EJBG-DJ-F	Micron Technology	DRAM MODULE	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					11 mm
PRA1G8Z21CD8SA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm		8589934592 bit							4,8	11 mm
MT42L256M32D4MG-25IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			256MX32	256M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
SUM64M16ZD8KNR-068	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466.27 MHz	7.5 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH						13.5 mm
SUU1G8Z11CD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm		8589934592 bit							4,8	11 mm
SUU1G8Z21ED8VA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1067 MHz	10 mm		8589934592 bit							4,8	11 mm
PRN1024M4V91AG8RHF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
EDJ1116EJBG-DJ-F	Micron Technology	DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					13.5 mm
SUM1G8Z01AD8WE-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm		8589934592 bit							4,8	12 mm
EDJ8216E5MB-GN-F	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX16	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1					13.5 mm	.225 ns
SGG1024M4V91AG8RHF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
EDW4032BABG-60-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDJ8232B5MB-GN-F	Micron Technology	DDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	1.575 V	1.2 mm		10.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm	.225 ns
MT42L128M16D4MG-3IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX16	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
PRN512M8V91AG8RGF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
SGG1024M4V91AG8RGF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
MT42L64M32D2MG-25IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			64MX32	64M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L128M64D3MG-18IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX64	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L64M32D4MG-3IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			64MX32	64M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
SUU512M8V90BG8RG-125TP	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
SMG256M16V80AG8GPF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V		667 MHz			4294967296 bit	1.425 V						8
MT42L128M32D4MG-25AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX32	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
PRN1024M4V91AG8RAF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
MT42L128M64D1MG-18IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX64	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L192M32D3MG-3AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4.7 mA	201326592 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			192MX32	192M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm	10 ns
MT42L128M64D4MG-25AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH		.65 mm			128MX64	128M			BOTTOM	1	S-PBGA-B134	1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
EDJ2108BDBG-JS-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					10.6 mm
MT42L384M32D3EV-25AT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.5 mm			384MX32	384M			BOTTOM	1	S-PBGA-B253	1.95 V	1.2 mm		11 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11 mm
EDJ1108BFSE-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					10.6 mm	.255 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.