TQFP DRAM 150

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4D263238I-UC50	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	358 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M		QUAD	1	R-PQFP-G100	3	2.625 V	1.2 mm	200 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH			260	.01 Amp	2,4,8	20 mm	.7 ns
K4D263238F-QC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	200 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4,8	20 mm	.7 ns
KM4132G112TQ-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	6 ns
K4D263238K-UC40	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	412 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M		QUAD	1	R-PQFP-G100	3	2.625 V	1.2 mm	250 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH			260	.02 Amp	2,4,8	20 mm	.6 ns
K4D623237A-QC60	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	20 mm	5.5 ns
KM4132G512ATQ-C	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	182 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5 ns
KM4132G112TQ-7/F7	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		1MX32	1M		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G112TQ-C	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	5 ns
K4D263238F-UC40	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M		QUAD	1	R-PQFP-G100		2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						20 mm	.6 ns
KM432D2131TQ-G0	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	100 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	6 ns
KM432D5131TQ-G0	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	524288 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	6.5 ns
KM432D2131TQ-G00	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	6 ns
K4D62323HA-QC55	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	430 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	183 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
K4G323222A-QC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
KM432D2131TQ-G10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	6 ns
KM432D2131TQ-G70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G271BTQR-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns
K4G323222M-QL50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
K4D263238D-QC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	200 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.7 ns
K4G323222M-QC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
K4D263238M-QC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	550 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	200 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.08 Amp	2,4,8	20 mm	.7 ns
K4G323222A-QL70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4D623237A-QC55	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	182 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	20 mm	5.5 ns
KM4132G112TQ-6/F6	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		1MX32	1M		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5.5 ns
K4D62323HA-QC60	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	410 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
K4D623237A-QC700	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH		30	240			20 mm	6 ns
K4D263238D-QC40	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	250 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.07 Amp	2,4,8	20 mm	.6 ns
K4G323222A-QC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4D623237M-QC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	380 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	143 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	5.5 ns
K4D623238B-QL55	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	650 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	182 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
K4D263238I-UC50T	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M		QUAD	1	R-PQFP-G100		2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						20 mm	.7 ns
K4D263238F-QC500	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M		QUAD	1	R-PQFP-G100		2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						20 mm	.7 ns
KM4132G112TQ-F6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	5.5 ns
K4G323222M-QL80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
KM4132G512TQ-8/F8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6.5 ns
K4G163222A-QL60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G271BTQR-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4G163222A-QL80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
K4G323222A-QL60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4G163222A-QL55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5 ns
K4G323222M-QC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M		QUAD	1	R-PQFP-G100	1	3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH				.002 Amp	4,8	20 mm	5.5 ns
KM4132G112TQ-C/FC	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		1MX32	1M		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5 ns
K4G813222B-QC10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4G323222M-QL45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4 ns
K4G813222B-QC80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns
K4D623238B-QC55	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	650 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	182 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
KM4132G512ATQ-F5	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
KM432D5131TQ-G7	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	524288 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	5.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.