TSOP2-R DRAM 1,492

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT4C4001JRG-8LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4LC4M4A1RG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e3		18.41 mm	70 ns
MT4C1004JRG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4001JRG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4M4A1RG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e3		18.41 mm	60 ns
MT4C1024RG-8LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C1004JRG-8L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C4001JRG-7IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	1MX4	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4256RG-8LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C1004JRG-7L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4256RG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C1024RG-10LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	100 ns
MT4C1004JRG-6LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C1004JRG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C4256RG-10LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	256KX4	256K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	100 ns
MT4C1024RG-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C4256RG-7LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	256KX4	256K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4256RG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C1004JRG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C1004JRG-8ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C16M1A1RG-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	60 ns
MT4C4001JRG-6IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	1MX4	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C1024RG-7LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT42C8256RG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	210 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0	.01 Amp	18.41 mm	70 ns
MT42C8255RG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	185 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0	.01 Amp	18.41 mm	70 ns
MT4C4001JRG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4M4A1RG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e3		18.41 mm	70 ns
MT4C16M1A1RG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	70 ns
MT4C1004JRG-7LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4001JRG-6LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C4M4B1RG-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e3		18.41 mm	60 ns
MT4LC4M4B1RG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.41 mm	70 ns
MT4C1004JRG-6L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C1024RG-7ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4M4B1RG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e3		18.41 mm	70 ns
MT4LC4M4B1RG-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0004 Amp	18.41 mm	60 ns
MT4C1024RG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	70 ns
MT4C4256RG-7L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.14 mm	70 ns
MT42C8256RG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0		18.41 mm	80 ns
MT4C4001JRG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C4256RG-8LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	256KX4	256K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	80 ns
MT4C4256RG-8L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.14 mm	80 ns
MT4C1004JRG-6IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4C1004JRG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3		17.14 mm	60 ns
MT4LC16M1A1RG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.41 mm	60 ns
MT4C16M1A1RG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.41 mm	60 ns
MT4C4M4B1RG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e3		18.41 mm	70 ns
MT4C1024RG-7L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.14 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.